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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2017 Wang, Xiaoye; Yang, Wenyuan; Wang, Baojun; Ji, Xianghai; Xu, Shengyong; Wang, Wei; Chen, Qing; Yang, Tao 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Nanowires  Surfaces  Metalorganic chemical vapor deposition  Selective-area growth  Nanomaterials  InAs  III-V NANOWIRES  HIGHLY UNIFORM  TRANSISTORS  HETEROEPITAXY  DIRECTION  SILICON  ATOMS  GAAS   Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2017 Han, Yuxiang; Fu, Mengqi; Tang, Zhiqiang; Zheng, Xiao; Ji, Xianghai; Wang, Xiaoye; Lin, Weijian; Yang, Tao; Chen, Qing 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 InAs nanowire  PPC  NPC  carrier scattering intrinsic photoelectric response  ELECTRONIC-PROPERTIES  ROOM-TEMPERATURE  PHOTODETECTORS  TRANSPORT   Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts 期刊论文 NANO LETTERS, 2016 Du, Wenna; Yang, Xiaoguang; Pan, Huayong; Ji, Xianghai; Ji, Haiming; Luo, Shuai; Zhang, Xingwang; Wang, Zhanguo; Yang, Tao 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Planar nanowire  InAsSb  growth direction  HRTEM  CAFM  INDIUM-PHOSPHIDE NANOWIRES  III-V NANOWIRES  BUILDING-BLOCKS  GAAS NANOWIRES  GUIDED GROWTH  SEEDED GROWTH  DEFECT-FREE  VLS GROWTH  SILICON  TRANSISTORS   InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition 期刊论文 NANOTECHNOLOGY, 2016 Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Luo, Shuai; Ji, Haiming; Xu, H. Q.; Yang, Tao 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 nanowires  core-shell heterostructure  InAs/GaSb  metal-organic chemical vapor deposition  FIELD-EFFECT TRANSISTORS  III-V NANOWIRES  INASSB NANOWIRES  INGAAS NANOWIRES  GAAS NANOWIRES  PHASE EPITAXY  DEFECT-FREE  HETEROSTRUCTURES  LUMINESCENCE  SILICON   Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires 期刊论文 NANO LETTERS, 2016 Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Yang, Tao 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Core-shell nanowires  InAs(Sb)/GaSb  selective-area growth  crystal structure  metal-organic chemical vapor deposition  electrical properties  FIELD-EFFECT TRANSISTORS  MOLECULAR-BEAM EPITAXY  INASSB NANOWIRES  SI  SILICON  AU  ARRAYS   Two different growth mechanisms for au-free InAsSb nanowires growth on Si substrate 期刊论文 crystal growth and design, 2015 Du, Wenna; Yang, Xiaoguang; Pan, Huayong; Wang, Xiaoye; Ji, Haiming; Luo, Shuai; Ji, Xianghai; Wang, Zhanguo; Yang, Tao 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13