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科研机构
半导体研究所 [13]
内容类型
会议论文 [13]
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2008 [1]
2003 [1]
2001 [2]
2000 [3]
1999 [2]
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半导体物理 [13]
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内容类型:会议论文
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Solid-state qubit measurement with single electron transistors
会议论文
2nd international workshop on solid-state quantum computing/mini-school on quantum information science, taipei, taiwan, jun 23-27, 2008
Jiao, HJ
;
Li, F
;
Wang, SK
;
Li, XQ
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
solid-state qubit
single-electron-transistor
quantum measurement
number-resolved master equation
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE
会议论文
international conference on superlattices nano-structures and nano-devices (icsnn-02), toulouse, france, jul 22-26, 2002
Lan Q
;
Niu ZC
;
Zhou DY
;
Kong YC
;
Wang XD
;
Miao ZH
;
Feng SL
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2010/11/15
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
crystal morphology
quantum dots
molecular beam epitaxy
semiconducting gallium arsenide
semiconducting indium gallium arsenide
1.35 MU-M
GAAS-SURFACES
PHOTOLUMINESCENCE
ISLANDS
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC
;
Wang XD
;
Miao ZH
;
Lan Q
;
Kong YC
;
Zhou DY
;
Feng SL
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
molecular beam epitaxy
InGaAs islands
photolumineseence
line-width
1.3 MU-M
INAS/GAAS QUANTUM DOTS
OPTICAL-PROPERTIES
CAP LAYER
GAAS
LUMINESCENCE
STRAIN
Methods to tune the electronic states of self-organized InAs/GaAs quantum dots
会议论文
5th international conference on the electrical transport and optical properties of inhomogeneous media (etopim5), hong kong, hong kong, jun 21-25, 1999
作者:
Wang H
;
Jiang DS
;
Wang H
;
Niu ZC
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
quantum dot
growth interruption
quantum dot laser
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
ENERGY-LEVELS
SPECTROSCOPY
Electronic characteristics of InAs self-assembled quantum dots
会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
InAs/GaAs quantum dots
self-assembled structure
DLTS
PL
band offset
ENERGY-LEVELS
CARRIER RELAXATION
SPECTROSCOPY
New way to enhance the uniformity of self-organized InAs quantum dots
会议论文
25th international symposium on compound semiconductors, nara, japan, oct 12-16, 1998
Zhu HJ
;
Wang H
;
Wang ZM
;
Cui LQ
;
Feng SL
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
MOLECULAR-BEAM EPITAXY
THRESHOLD
GROWTH
LASER
Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots
会议论文
5th international symposium on quantum confinement - nanostructures, boston, ma, nov 02-05, 1998
作者:
Jiang DS
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/10/29
Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots
会议论文
10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997
作者:
Han PD
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
GAAS
GROWTH
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