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	Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots
	Han PD
	1997
会议名称	10th international conference on superlattices, microstructures and microdevices
会议日期	jul 08-11, 1997
会议地点	lincoln, nebraska
关键词	GAAS GROWTH
页码	213-218
通讯作者	wang zm chinese acad sci inst semicond natl lab superlattices & microstruct beijing 100083 peoples r china.
中文摘要	the influence of interdot electronic coupling on photoluminescence (pl) spectra of self-assembled inas/gaas quantum dots (qds) has been systematically investigated combining with the measurement of transmission electron microscopy. the experimentally observed fast red-shift of pl energy and an anomalous reduction of the linewidth with increasing temperature indicate that the qd ensemble can be regarded as a coupled system. the study of multilayer vertically coupled qd structures shows that a red-shift of pl peak energy and a reduction of pl linewidth are expected as the number of qd layers is increased. on the other hand, two layer qds with different sizes have been grown according to the mechanism of a vertically correlated arrangement. however, only one pl peak related to the large qd ensemble has been observed due to the strong coupling in inas pairs. a new possible mechanism to reduce the pl linewidth of qd ensemble is also discussed.
英文摘要	the influence of interdot electronic coupling on photoluminescence (pl) spectra of self-assembled inas/gaas quantum dots (qds) has been systematically investigated combining with the measurement of transmission electron microscopy. the experimentally observed fast red-shift of pl energy and an anomalous reduction of the linewidth with increasing temperature indicate that the qd ensemble can be regarded as a coupled system. the study of multilayer vertically coupled qd structures shows that a red-shift of pl peak energy and a reduction of pl linewidth are expected as the number of qd layers is increased. on the other hand, two layer qds with different sizes have been grown according to the mechanism of a vertically correlated arrangement. however, only one pl peak related to the large qd ensemble has been observed due to the strong coupling in inas pairs. a new possible mechanism to reduce the pl linewidth of qd ensemble is also discussed.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:38导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:38z (gmt). no. of bitstreams: 1 3065.pdf: 2191054 bytes, checksum: 1af4fd878099bd6dbbee826a0897e0f9 (md5) previous issue date: 1997; univv nebraska, coll engn.; ctr mat res & anal.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, electron microscopy lab, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	univv nebraska, coll engn.; ctr mat res & anal.
会议录	physics of low-dimensional structures, 12
会议录出版者	v s v co. ltd ; box 11, 105523 moscow, russia
会议录出版地	box 11, 105523 moscow, russia
学科主题	半导体物理
语种	英语
ISSN号	0204-3467
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15091]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han PD. Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots[C]. 见:10th international conference on superlattices, microstructures and microdevices. lincoln, nebraska. jul 08-11, 1997.

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