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新疆理化技术研究所 [47]
内容类型
期刊论文 [47]
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2022 [1]
2021 [3]
2020 [1]
2019 [4]
2018 [8]
2017 [3]
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Physics [7]
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1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:
Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qiwen) [1] , [2]
;
Lu, W (Lu, Wu) [1] , [2]
;
Cui, JW (Cui, Jiangwei) [1] , [2]
;
Li, YD (Li, Yudong) [1] , [2]
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2022/04/07
Total ionizing dose irradiation
UTBB FD-SOI
1
f noise
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier
期刊论文
AIP ADVANCES, 2021, 卷号: 11, 期号: 5, 页码: 1-6
作者:
Xiang, CAF (Xiang, Chuanfeng) 1 , 2
;
Yao, S (Yao, Shuai) 1 , 3
;
Lu, W (Lu, Wu) 1 , 2
;
Li, XL (Li, Xiaolong) 1
;
Yu, X (Yu, Xin) 1
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2021/08/06
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted
Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 58, 期号: 3, 页码: 1-6
作者:
Xu, Y (Xu, Yan)[ 1,2 ]
;
Heini, M (Heini, Maliya)[ 2 ]
;
Shen, XB (Shen, Xiaobao)[ 2,3 ]
;
Aierken, A (Aierken, Abuduwayiti)[ 2,4 ]
;
Zhao, XF (Zhao, Xiaofan)[ 2 ]
收藏
  |  
浏览/下载:135/0
  |  
提交时间:2019/03/19
Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139
期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
作者:
Yao, S (Yao, Shuai)[ 1,2,3 ]
;
Lu, W (Lu, Wu)[ 1,2,4 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1,2 ]
;
Li, XL (Li, Xiaolong)[ 1,2,3 ]
收藏
  |  
浏览/下载:81/0
  |  
提交时间:2019/02/25
Enhanced low dose rate sensitivity
single event transient
bipolar voltage comparator
synergistic effect
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:98/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor
期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8
作者:
Liu, MH (Liu, Mohan)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1 ]
;
Li, XL (Li, Xiaolong)[ 1 ]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2020/04/03
saturation effect
gain degradation
total ionizing dose
gamma ray
bipolar transistor
Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods
期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 9, 页码: 202-209
作者:
Li, XL (Li Xiao-Long)[ 1,2,3 ]
;
Lu, W (Lu Wu)[ 1,2 ]
;
Wang, X (Wang Xin)[ 1,2,3 ]
;
Guo, Q (Guo Qi)[ 1,2 ]
;
He, CF (He Cheng-Fa)[ 1,2 ]
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2018/09/27
Bipolar Circuit
Enhanced Low-dose-rate Sensitivity
Accelerated Evaluation Method
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