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兰州理工大学 [2]
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会议论文 [10]
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A stretchable transparent conductive film based on polymer microspheres lithography technology
会议论文
上海, 2018
作者:
Xinyu Zhang
;
Yougen Hu
;
Wenlong Jiang
;
Pengli Zhu
;
Rong Sun
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/01/31
The self-sense monitoring of coating wear by in situ SiO2-coated SrAl2O4:Eu2+,Dy3+ luminescent particles
会议论文
Porto, Portugal, July 26, 2017 - July 27, 2017
作者:
Li, Wensheng
;
He, Ling
;
Hu, Chunxia
;
Yang, Xiao Tian
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2020/11/15
Aluminum alloys
Composite coatings
Copper alloys
Friction
Light
Luminescence
Plasma jets
Plasma spraying
Silica
Thermal fatigue
Tribology
Wear resistance
Friction coefficients
Luminescence properties
Luminescence spectrum
Luminescent particle
Luminescent property
Supersonic plasma spraying
Tribological coatings
Tribological performance
The self-sense monitoring of coating wear by in situ SiO2-coated SrAl2O4: Eu2+, Dy3+ luminescent particles
会议论文
作者:
Li, Wensheng
;
He, Ling
;
Hu, Chunxia
;
Yang, XiaoTian
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/11/15
Atomic force microscopy and X-ray photoelectron spectroscopy study on the surface and interface states of Liq and ITO films
会议论文
2010 International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2010, Shenzhen, China, November 6, 2010 - November 8, 2010
作者:
Li, Jianfeng
;
Song, Qing
;
Shi, Weibing
;
Zhang, Fujia
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/01/20
Atomic spectroscopy
Absorption
Absorption spectroscopy
Argon
Atomic force microscopy
Binding energy
Electron energy levels
Electrons
Indium
ITO glass
Materials
O rings
Oxygen
Photoelectricity
Photons
Spectrum analysis
Sputtering
Surface morphology
Surfaces
Tin
X ray photoelectron spectroscopy
X rays
AFM observation
Air molecules
Argon ion
Blue electroluminescent materials
C atoms
Coated glass
Coordination bonds
Different sizes
Effect of oxygen
Indium tin oxide
ITO films
Li atoms
Liq/ITO
Organic light-emitting devices
Organic materials
Quinolate
Sputtering time
Surface and interface electron state
Surface and interface state
X-ray photoelectron spectroscopy studies
XPS
XPS spectra
Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates
会议论文
JOURNAL OF ELECTRONIC MATERIALS, 48th Electronic Materials Conference (EMC), University Pk, PA, Web of Science
Mei, Z. X.
;
Du, X. L.
;
Wang, Y.
;
Ying, M. J.
;
Zeng, Z. Q.
;
Yuan, H. T.
;
Jia, J. F.
;
Xue, Q. K.
;
Zhang, Z.
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  |  
浏览/下载:3/0
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Li, Y
;
Yi, XY
;
Wang, XD
;
Guo, JX
;
Wang, LC
;
Wang, GH
;
Yang, FH
;
Zeng, YP
;
Li, JM
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  |  
浏览/下载:50/0
  |  
提交时间:2010/03/09
GaN
LED
plasma
damage
etch
ICP
PECVD
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE)
会议论文
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.
;
Lu Y. M.
;
Shen D. Z.
;
Zhang Z. Z.
;
Li B. H.
;
Zhang J. Y.
;
Yao B.
;
Liu Y. C.
;
Fan X. W.
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  |  
浏览/下载:16/0
  |  
提交时间:2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover
n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.
Optical properties of AIInGaN quaternary alloys
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS
;
Dong X
;
Luo XD
;
Liu XL
;
Xu ZY
;
Ge WK
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
LIGHT-EMITTING-DIODES
LOCALIZED EXCITONS
LUMINESCENCE
RELAXATION
SILICON
BAND
Plasma pretreatment of GaAs substrates and ECR-PAMOCVD of cubic GaN
会议论文
2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED), CHIBA, JAPAN
作者:
Gu, B
;
Xu, Y
;
Qin, FW
;
Wang, SS
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  |  
浏览/下载:1/0
  |  
提交时间:2020/01/06
Plasma treatment of p-GaN/n-ZnO light-emitting diodes (CPCI-S收录)
会议论文
OXIDE-BASED MATERIALS AND DEVICES V
作者:
Leung, Yu Hang[1]
;
Ng, Alan M. C.[1,2]
;
Djurisic, Aleksandra B.[1]
;
Chan, Wai Kin[3]
;
Fong, Patrick W. K.[4]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/12
ZnO
nanorods
plasma treatment
light-emitting diodes
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