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| Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者: Song HP ; Wei HY; Li CM; Jiao CM
  收藏 | 浏览/下载：65/4 | 提交时间：2011/07/05
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| Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者: Yin ZG; Zhang XW; Tan HR; Fan YM; Zhang SG
收藏 | 浏览/下载：41/3 | 提交时间：2011/07/05
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| Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者: Li GK
收藏 | 浏览/下载：74/2 | 提交时间：2011/07/05
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| Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者: Wei HY; Song HP; Zhang B
收藏 | 浏览/下载：64/2 | 提交时间：2011/07/05
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| Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏 | 浏览/下载：41/0 | 提交时间：2010/12/28
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| Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
作者: Ye XL; Liang S
收藏 | 浏览/下载：32/4 | 提交时间：2010/03/08
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| High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber 期刊论文
optical materials, 2009, 卷号: 31, 期号: 8, 页码: 1215-1217
Pan SD; Zhao LN; Yuan Y; Zhu SN; He JL; Wang YG
收藏 | 浏览/下载：104/2 | 提交时间：2010/03/08
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| Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 151-154
作者: Li Yan
收藏 | 浏览/下载：15/0 | 提交时间：2010/11/23 |
| Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015415
作者: Jia CH
收藏 | 浏览/下载：173/14 | 提交时间：2010/03/08
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| Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者: Zhao J
收藏 | 浏览/下载：43/4 | 提交时间：2011/07/05
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