Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

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	Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film
	Li Yan
刊名	半导体学报
	2009
卷号	30 期号:9 页码:151-154
中文摘要	the influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (pecvd) silicon nitride thin film is studied. the deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of sin_x:h by hf solution. a low etch rate was achieved by increasing the sih_4 gas flow rate or annealing temperature, or decreasing the nh_3 and n_2 gas flow rate. concen-trated, buffered, and dilute hydrofluoric acid were utilized as etchants for sio_2 and sin_x:h. a high etching selectivity of sio_2 over sin_x:h was obtained using highly concentrated buffered hf.
英文摘要	the influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (pecvd) silicon nitride thin film is studied. the deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of sin_x:h by hf solution. a low etch rate was achieved by increasing the sih_4 gas flow rate or annealing temperature, or decreasing the nh_3 and n_2 gas flow rate. concen-trated, buffered, and dilute hydrofluoric acid were utilized as etchants for sio_2 and sin_x:h. a high etching selectivity of sio_2 over sin_x:h was obtained using highly concentrated buffered hf.; 于2010-11-23批量导入; zhangdi于2010-11-23 12:59:53导入数据到semi-ir的ir; made available in dspace on 2010-11-23t04:59:53z (gmt). no. of bitstreams: 1 3662.pdf: 219266 bytes, checksum: aa9510f0e9e2171eeb09ca22f0567bd4 (md5) previous issue date: 2009; the national high technology research and development program of china,the state key development program for basic research of china,the hundred talents plan of chinese academy of sciences; institute of semiconductors, chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
资助信息	the national high technology research and development program of china,the state key development program for basic research of china,the hundred talents plan of chinese academy of sciences
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15707]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Yan. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film[J]. 半导体学报,2009,30(9):151-154.
APA	Li Yan.(2009).Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film.半导体学报,30(9),151-154.
MLA	Li Yan."Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film".半导体学报 30.9(2009):151-154.