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| Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者: Xu B ; Jin P; Ye XL
  收藏 | 浏览/下载：63/1 | 提交时间：2011/07/05
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| Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 23, 页码: 5846-5850
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Ren YY (Ren Y. Y.); Wang ZG (Wang Z. G.)
收藏 | 浏览/下载：105/0 | 提交时间：2010/04/11
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| Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.251910
Wan KS (Wan Keshu); Porporati AA (Porporati Alessandro Alan); Feng G (Feng Gan); Yang H (Yang Hui); Pezzotti G (Pezzotti Giuseppe)
收藏 | 浏览/下载：41/0 | 提交时间：2010/04/11
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| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) 期刊论文
journal of crystal growth, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499
作者: Xu B; Ye XL; Jin P
收藏 | 浏览/下载：45/0 | 提交时间：2010/03/17
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| Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power 期刊论文
solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964
Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG
收藏 | 浏览/下载：298/3 | 提交时间：2010/04/11
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| Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices 期刊论文
nanotechnology, 2005, 卷号: 16, 期号: 8, 页码: 1379-1382
作者: Jin P; Xu B
收藏 | 浏览/下载：219/41 | 提交时间：2010/03/17
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| Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者: Jin P; Xu B
收藏 | 浏览/下载：127/16 | 提交时间：2010/03/29
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| Controllable growth of semiconductor nanometer structures 期刊论文
microelectronics journal, 2003, 卷号: 34, 期号: 5-8, 页码: 379-382
Wang ZG; Wu J
收藏 | 浏览/下载：289/9 | 提交时间：2010/08/12
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| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method 期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25
Qu BZ; Chen Z; Lu DC; Han P; Liu XG; Wang XH; Wang D; Zhu QS; Wang ZG
收藏 | 浏览/下载：37/0 | 提交时间：2010/08/12
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| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 49-54
作者: Xu B
收藏 | 浏览/下载：58/0 | 提交时间：2010/08/12
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