Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

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	Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power
	Liu JQ ; Liu FQ ; Lu XZ ; Guo Y ; Wang ZG
刊名	solid-state electronics
	2005
卷号	49 期号:12 页码:1961-1964
关键词	X-ray diffraction molecular beam epitaxy semiconducting gallium compounds quantum-cascade lasers (QCLs) UNIPOLAR SEMICONDUCTOR-LASERS MU-M OPERATION
ISSN号	0038-1101
通讯作者	liu, fq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: fqliu@red.semi.ac.cn
中文摘要	quasi-continuous-wave operation of gaas/algaas quantum-cascade lasers with high average optical power is demonstrated. double x-ray diffraction has been used to investigate the quality of the epitaxial material. the compositional gradients and the interface quality are controlled effectively. the corrected average power of per facet about 17 mw and temperature tuning coefficient of the gain peak about 0.91 nm/k from 83 k to 140 k is achieved in pulse operation. best value of threshold current density is less than 3.0 ka/cm(2) at 83 k. (c) 2005 elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10908]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu JQ,Liu FQ,Lu XZ,et al. Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power[J]. solid-state electronics,2005,49(12):1961-1964.
APA	Liu JQ,Liu FQ,Lu XZ,Guo Y,&Wang ZG.(2005).Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power.solid-state electronics,49(12),1961-1964.
MLA	Liu JQ,et al."Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power".solid-state electronics 49.12(2005):1961-1964.