|
已选(0)清除
条数/页： 排序方式：
|
| First principles study of the electronic properties of twinned SiC nanowires 期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者: Li JB
  收藏 | 浏览/下载：100/6 | 提交时间：2011/07/05
|
| Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者: Xu B; Zhou GY; Ye XL; Zhang HY
收藏 | 浏览/下载：53/5 | 提交时间：2011/07/05
|
| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者: Duan RF
收藏 | 浏览/下载：80/4 | 提交时间：2011/07/05
|
| Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者: Shi K; Jiao CM; Song HP
收藏 | 浏览/下载：94/7 | 提交时间：2011/07/05
|
| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者: Pan X
收藏 | 浏览/下载：20/0 | 提交时间：2011/09/14
|
| Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏 | 浏览/下载：41/0 | 提交时间：2010/12/28
|
| Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏 | 浏览/下载：73/2 | 提交时间：2010/05/24
|
| Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903
Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC
收藏 | 浏览/下载：31/0 | 提交时间：2010/03/08
|
| Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 064211
作者: Wang Y; Pan JQ
收藏 | 浏览/下载：112/0 | 提交时间：2010/03/08
|
| Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏 | 浏览/下载：193/43 | 提交时间：2010/03/08
|
