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CORC

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Growth and annealing of zinc-blende cdse thin films on gaas (001) by molecular beam epitaxy 期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043
作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 5
作者:  Wang Wei;  Su Shao-Jian;  Zheng Jun;  Zhang Guang-Ze;  Zuo Yu-Hua
收藏  |  浏览/下载：112/0  |  提交时间：2019/05/12
Optimization of vi/ii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy 期刊论文
Applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Cui, Lijie;  Li, Yanbo
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy 期刊论文
Journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Li, Yanbo
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Cui LJ (Cui Lijie); Li YB (Li Yanbo)
收藏  |  浏览/下载：158/17  |  提交时间：2010/07/05
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo)
收藏  |  浏览/下载：148/33  |  提交时间：2010/06/04
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04
An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application 期刊论文
Solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Wang, X. L.;  Chen, T. S.;  Xiao, H. L.;  Tang, J.;  Ran, J. X.
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Promoting strain relaxation of si0.72ge0.28 film on si (100) substrate by inserting a low-temperature ge islands layer in uhvcvd 期刊论文
Applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 2660-2664
作者:  Zhou, Zhiwen;  Cai, Zhimeng;  Li, Cheng;  Lai, Hongkai;  Chen, Songyan
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12

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