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	An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application
	Wang, X. L.1,2; Chen, T. S.3; Xiao, H. L.1,2; Tang, J.1,2; Ran, J. X.1,2; Zhang, M. L.1,2; Feng, C.1,2; Hou, Q. F.1,2; Wei, M.1,2; Jiang, L. J.1,2
刊名	Solid-state electronics
	2009-03-01
卷号	53期号:3页码:332-335
关键词	Algan/aln/gan Hemt Mocvd Sic substrate Power device
ISSN号	0038-1101
DOI	10.1016/j.sse.2009.01.003
通讯作者	Wang, x. l.(xlwang@semi.ac.cn)
英文摘要	Optimized algan/aln/gan high electron mobility transistor (hemt) with high mobility gan channel layer structures were grown on 2-in. diameter semi-insulating 6h-sic substrates by mocvd. the 2-in. diameter gan hemt wafer exhibited a low average sheet resistance of 261.9 omega/square, with the resistance un-uniformity as low as 2.23%. atomic force microscopy measurements revealed a smooth algan surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. for the single-cell hemts device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 a/mm, an extrinsic transconductance of 450 ms/mm, a current gain cutoff frequency of 24 ghz and a maximum frequency of oscillation 54 ghz were achieved. the four-cell internally-matched gan hemts device with 10-mm total gate width demonstrated a very high output power of 45.2 w at 8 ghz under the condition of continuous-wave (cw), with a power added efficiency of 32.0% and power gain of 6.2 db. to our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for x-band gan-based hemts. crown copyright (c) 2009 published by elsevier ltd. all rights reserved.
WOS关键词	PERFORMANCE ; MOBILITY ; MOCVD ; POWER ; OPTIMIZATION ; EPITAXY
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000264731300015
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427607
专题	半导体研究所
通讯作者	Wang, X. L.
作者单位	1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Nanjing Electron Devices Inst, Nanjing 210016, Peoples R China
推荐引用方式 GB/T 7714	Wang, X. L.,Chen, T. S.,Xiao, H. L.,et al. An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application[J]. Solid-state electronics,2009,53(3):332-335.
APA	Wang, X. L..,Chen, T. S..,Xiao, H. L..,Tang, J..,Ran, J. X..,...&Wang, Z. G..(2009).An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application.Solid-state electronics,53(3),332-335.
MLA	Wang, X. L.,et al."An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application".Solid-state electronics 53.3(2009):332-335.

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