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科研机构
半导体研究所 [31]
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期刊论文 [31]
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2011 [1]
2010 [5]
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光电子学 [31]
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:
Yang H
;
Jiang DS
;
Le LC
;
Zhang SM
;
Wu LL
收藏
  |  
浏览/下载:46/3
  |  
提交时间:2011/07/05
Nitride materials
Crystal growth
Composition fluctuations
X-ray diffraction
LAYER
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers
期刊论文
physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314
作者:
Wang H
;
Wang H
;
Yang
;
Jiang DS
收藏
  |  
浏览/下载:121/5
  |  
提交时间:2010/04/28
GAN
ALLOYS
Design of Photonic Crystal Semiconductor Optical Amplifier With Polarization Independence
期刊论文
journal of lightwave technology, 2010, 卷号: 28, 期号: 22, 页码: 3207-3211
Zhang YJ (Zhang Yejin)
;
Zheng WH (Zheng Wanhua)
;
Aiyi Q (Aiyi Qi)
;
Qu HW (Qu Hongwei)
;
Peng HL (Peng Hongling)
;
Xie SZ (Xie Shizhong)
;
Chen LH (Chen Lianghui)
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/12/05
Photonic crystal (PC)
polarization independence
slow light
semiconductor optical amplifier (SOA)
ENHANCED PARAMETRIC AMPLIFICATION
SLOW-LIGHT
WAVE-GUIDES
Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition
期刊论文
optics communications, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Zhou ZW (Zhou Zhiwen)
;
He JK (He Jingkai)
;
Wang RC (Wang Ruichun)
;
Li C (Li Cheng)
;
Yu JZ (Yu Jinzhong)
收藏
  |  
浏览/下载:85/0
  |  
提交时间:2010/08/17
Germanium
Hererojunction
Photodiode
Tensile strain
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:
Wang YT
;
Zhao DG
;
Zhang SM
;
Yang H
;
Jiang DS
收藏
  |  
浏览/下载:146/11
  |  
提交时间:2010/04/04
Nitride materials
Crystal growth
X-ray diffraction
TIME-RESOLVED PHOTOLUMINESCENCE
LIGHT-EMITTING-DIODES
PIEZOELECTRIC FIELDS
LASER-DIODES
DEPENDENCE
RECOMBINATION
POLARIZATION
DYNAMICS
GROWTH
MOCVD
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD
期刊论文
journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Sun YP (Sun Yuanping)
;
Sun Y (Sun Yuanping)
;
Cho YH (Cho Yong-Hoon)
;
Wang H (Wang Hui)
;
Wang LL (Wang Lili)
;
Zhang SM (Zhang Shuming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:513/2
  |  
提交时间:2010/08/17
InN
Burstein-Moss effect
Quantum confinement effect
Activation energy
FUNDAMENTAL-BAND GAP
WELL STRUCTURES
EMISSION
SINGLE
Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals
期刊论文
journal of vacuum science & technology b, 2009, 卷号: 27, 期号: 3, 页码: 1093-1096
Wang HL
;
Xing MX
;
Ren G
;
Zheng WH
收藏
  |  
浏览/下载:121/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
photonic crystals
plasma materials processing
semiconductor lasers
sputter etching
The impact of imperfect symmetry on band edge modes of a two-dimensional photonic crystal with square lattice
期刊论文
journal of optics a-pure and applied optics, 2008, 卷号: 10, 期号: 9, 页码: art. no. 095203
Zhou WJ
;
Chen W
;
Liu AJ
;
Xing MX
;
Ren G
;
Zhang YJ
;
Chen LH
;
Zheng WH
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/03/08
surface-emitting
Investigation on the structural origin of n-type conductivity in InN films
期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H
;
Jiang, DS
;
Wang, LL
;
Sun, X
;
Liu, WB
;
Zhao, DG
;
Zhu, JJ
;
Liu, ZS
;
Wang, YT
;
Zhang, SM
;
Yang, H
收藏
  |  
浏览/下载:53/1
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
GAN FILMS
DISLOCATION SCATTERING
LAYER THICKNESS
INDIUM NITRIDE
BAND-GAP
VACANCIES
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?
期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG
;
Jiang, DS
;
Zhu, JJ
;
Liu, ZS
;
Zhang, SM
;
Liang, JW
;
Yang, H
收藏
  |  
浏览/下载:51/5
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
X-RAY-DIFFRACTION
MG-DOPED GAN
UNDOPED GAN
PHOTOLUMINESCENCE BANDS
THREADING DISLOCATIONS
POSITRON-ANNIHILATION
GROWTH STOICHIOMETRY
GALLIUM NITRIDE
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