Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

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	Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD
	Sun YP (Sun Yuanping) ; Sun Y (Sun Yuanping) ; Cho YH (Cho Yong-Hoon) ; Wang H (Wang Hui) ; Wang LL (Wang Lili) ; Zhang SM (Zhang Shuming) ; Yang H (Yang Hui)
刊名	journal of the korean physical society
	2010
卷号	57 期号:1 页码:128-132
关键词	InN Burstein-Moss effect Quantum confinement effect Activation energy FUNDAMENTAL-BAND GAP WELL STRUCTURES EMISSION SINGLE
通讯作者	sun, yp, yantai univ, inst sci & technol optoelect informat, yantai 264005, peoples r china. 电子邮箱地址: ypsun@ytu.edu.cn
合作状况	国际
英文摘要	inn nanostructures with and without gan capping layers were grown by using metal-organic chemical vapor deposition. morphological, structural, and optical properties were systematically studied by using atomic force microscopy, x-ray diffraction (xrd) and temperature-dependent photoluminescence (pl). xrd results show that an ingan structure is formed for the sample with a gan capping layer, which will reduce the quality and the ir pl emission of the inn. the lower emission peak at similar to 0.7 ev was theoretically fitted and assigned as the band edge emission of inn. temperature-dependent pl shows a good quantum efficiency for the sample without a gan capping layers; this corresponds to a lower density of dislocations and a small activation energy.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t01:48:06z no. of bitstreams: 1 effects of gan capping on the structural and the optical properties of inn nanostructures grown by using mocvd.pdf: 1213809 bytes, checksum: d09d6e62b27a1bca68e9f63a56e01861 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t02:27:20z (gmt) no. of bitstreams: 1 effects of gan capping on the structural and the optical properties of inn nanostructures grown by using mocvd.pdf: 1213809 bytes, checksum: d09d6e62b27a1bca68e9f63a56e01861 (md5); made available in dspace on 2010-08-17t02:27:20z (gmt). no. of bitstreams: 1 effects of gan capping on the structural and the optical properties of inn nanostructures grown by using mocvd.pdf: 1213809 bytes, checksum: d09d6e62b27a1bca68e9f63a56e01861 (md5) previous issue date: 2010; this work was supported by the outstanding young researchers award foundation of shandong province with grant no. 2006bs01240, natural science foundation of shandong province (no. 2009vra06063) and the foundation of the nano-bio-photonics laboratory in korea advanced institute of science and technology, korea. it was also supported by the national basic research program (2007cb936700), the national natural science foundation of china (grant number: 10704065), and the state key laboratory of integrated optoelectronics, institute of semiconductors, chinese academy of sciences.; 国际
学科主题	光电子学
收录类别	SCI
资助信息	this work was supported by the outstanding young researchers award foundation of shandong province with grant no. 2006bs01240, natural science foundation of shandong province (no. 2009vra06063) and the foundation of the nano-bio-photonics laboratory in korea advanced institute of science and technology, korea. it was also supported by the national basic research program (2007cb936700), the national natural science foundation of china (grant number: 10704065), and the state key laboratory of integrated optoelectronics, institute of semiconductors, chinese academy of sciences.
语种	英语
公开日期	2010-08-17 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13487]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Sun YP ,Sun Y ,Cho YH ,et al. Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD[J]. journal of the korean physical society,2010,57(1):128-132.
APA	Sun YP .,Sun Y .,Cho YH .,Wang H .,Wang LL .,...&Yang H .(2010).Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD.journal of the korean physical society,57(1),128-132.
MLA	Sun YP ,et al."Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD".journal of the korean physical society 57.1(2010):128-132.