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Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:  Xue CL
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05
Omnidirectional absorption enhancement in hybrid waveguide-plasmon system 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 26, 页码: 261101
Zhang J; Bai WL; Cai LK; Chen X; Song GF; Gan QQ
收藏  |  浏览/下载：17/0  |  提交时间：2012/02/06
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Investigation of flexible electrodes modified by TiN, Pt black and IrO (x) 期刊论文
science china-technological sciences, 2011, 卷号: 54, 期号: 9, 页码: 2305-2309
Li XQ; Pei WH; Tang RY; Gui Q; Guo K; Wang Y; Chen HD
收藏  |  浏览/下载：16/0  |  提交时间：2011/09/14
A new method to measure the carrier concentration of p-GaN 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M; Zhao DG
收藏  |  浏览/下载：66/7  |  提交时间：2011/07/05
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：110/2  |  提交时间：2010/04/22
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
作者:  Zhu JJ;  Yang H;  Yang H;  Zhao DG;  Zhang SM
收藏  |  浏览/下载：231/10  |  提交时间：2010/04/13
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：88/41  |  提交时间：2010/03/08
Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing 期刊论文
chinese optics letters, 2008, 卷号: 6, 期号: 2, 页码: 108-111
Li AK; Wang ZM; Liu JJ; Zeng XY; Wang CX; Chen HD
收藏  |  浏览/下载：83/2  |  提交时间：2010/03/08
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载：83/0  |  提交时间：2010/04/11

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