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半导体研究所 [21]

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期刊论文 [19]

会议论文 [2]

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半导体材料 [21]

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限定条件	学科主题：半导体材料

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	Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512 Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.) 收藏 \| 浏览/下载：12/0 \| 提交时间：2010/11/14 CHEMICAL-VAPOR-DEPOSITION INAS QUANTUM DOTS MOLECULAR-BEAM EPITAXY GAAS SURFACES ISLANDS GROWTH FABRICATION MIGRATION ARRAYS
	Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏 \| 浏览/下载：28/0 \| 提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX GROWTH LASERS GAAS
	MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198 Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.) 收藏 \| 浏览/下载：35/0 \| 提交时间：2010/04/11 metamorphic long wavelength quantum dots molecular beam epitaxy MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION 1.3 MU-M GAAS EMISSION RANGE ISLANDS ARRAYS LASERS
	Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 期刊论文 journal of crystal growth, 2006, 卷号: 287, 期号: 1, 页码: 28-33 Fan WJ; Abiyasa AP; Tan ST; Yu SF; Sun XW; Xia JB; Yeo YC; Li MF; Chong TC 收藏 \| 浏览/下载：98/0 \| 提交时间：2010/04/11 computer simulation low dimensional structures zinc compounds semiconducting II-VI materials OPTICAL GAIN SPECTRA BAND-STRUCTURES ROOM-TEMPERATURE LASERS
	The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344 作者: Jiang DS 收藏 \| 浏览/下载：57/0 \| 提交时间：2010/08/12 quantum wells GaInNAs strain-compensated GaNAs layers MOLECULAR-BEAM EPITAXY PHOTOLUMINESCENCE LASERS THRESHOLD
	Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer 期刊论文 journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400 作者: Xu B; Ye XL 收藏 \| 浏览/下载：63/0 \| 提交时间：2010/08/12 photoluminescence molecular beam epitaxy nanomaterials quantum dots semiconducting III-V materials 1.3 MU-M TEMPERATURE-DEPENDENCE EXCITED-STATES INXGA1-XAS GROWTH LASERS INP
	Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308 作者: Xu B; Li CM; Jin P; Ye XL; Li DB 收藏 \| 浏览/下载：97/0 \| 提交时间：2010/08/12 atomic force microscopy low dimensional structures nanostructures molecular beam epitaxy semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE THRESHOLD CURRENT MU-M LASERS
	Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文 journal of crystal growth, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46 作者: Xu B; Ye XL 收藏 \| 浏览/下载：77/2 \| 提交时间：2010/08/12 nanostructures molecular beam epitaxy semiconducting III-V materials ELECTRON-PHONON INTERACTIONS TEMPERATURE-DEPENDENCE SEMICONDUCTOR NANOCRYSTALS CARRIER TRANSFER INAS GAAS LASERS ISLANDS GROWTH GAIN
	Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 55-60 Lin F; Wu J; Jiang WH; Cui H; Wang ZG 收藏 \| 浏览/下载：102/5 \| 提交时间：2010/08/12 low dimensional structures molecular beam epitaxy semiconducting III-V materials MOLECULAR-BEAM EPITAXY GAAS GROWTH PHOTOLUMINESCENCE SURFACES ARRAYS LASER
	Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368 Wang XD; Niu ZC; Feng SL; Miao ZH 收藏 \| 浏览/下载：93/3 \| 提交时间：2010/08/12 atomic force microscopy low dimensional structures optical microscopy molecular beam epitaxy nanomaterials semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE M PHOTOLUMINESCENCE INGAAS OVERGROWTH GAAS DOTS EMISSION ENERGY LASER

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