CORC

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CORC

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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05
Residual impurities and electrical properties of undoped LEC InAs single crystals 期刊论文
半导体学报, 2010, 卷号: 31, 期号: 4, 页码: 042001-1-042001-4
Hu Weijie; Zhao Youwen; Sun Wenrong; Duan Manlong; Dong Zhiyuan; Yang Jun
收藏  |  浏览/下载：9/0  |  提交时间：2011/08/16
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.)
收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文
microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Ran JX; Wang XL; Hu GX; Wang JX; Li JP; Wang CM; Zeng YP; Li JM
收藏  |  浏览/下载：53/0  |  提交时间：2010/04/11
Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Liu XF (Liu Xing-Fang); Sun GS (Sun Guo-Sheng); Li JM (Li Jin-Min); Zhao YM (Zhao Yong-Mei); Li JY (Li Jia-Ye); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：74/0  |  提交时间：2010/04/11
Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载：166/71  |  提交时间：2010/03/29
ALN  IMPURITIES  DONOR  
FexSi grown with mass-analyzed low-energy dual ion beam deposition 期刊论文
journal of crystal growth, 2004, 卷号: 263, 期号: 1-4, 页码: 143-147
Liu LF; Chen NF; Zhang FQ; Chen CL; Li YL; Yang SY; Liu Z
收藏  |  浏览/下载：80/34  |  提交时间：2010/03/09
MnSi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique 期刊论文
journal of crystal growth, 2001, 卷号: 226, 期号: 4, 页码: 517-520
Yang JL; Chen NF; Liu ZK; Yang SY; Chai CL; Liao MY; He HJ
收藏  |  浏览/下载：112/13  |  提交时间：2010/08/12

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