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Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载：97/7  |  提交时间：2011/07/05
Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays 期刊论文
applied physics express, 2011, 卷号: 4, 期号: 4, 页码: article no.45001
Liu JQ; Wang JF; Gong XJ; Huang J; Xu K; Zhou TF; Zhong HJ; Qiu YX; Cai DM; Ren GQ; Yang H
收藏  |  浏览/下载：71/3  |  提交时间：2011/07/05
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys 期刊论文
solid state communications, 2011, 卷号: 151, 期号: 8, 页码: 647-650
Su SJ; Wang W; Cheng BW; Hu WX; Zhang GZ; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：64/3  |  提交时间：2011/07/05
A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Analysis of Modified Williamson-Hall Plots on GaN Layers 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.16101
Liu JQ; Qiu YX; Wang JF; Xu K; Yang H
收藏  |  浏览/下载：36/3  |  提交时间：2011/07/05
Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.103507
作者:  Wei Y;  Huo YH;  Zhang YH;  Huang JL;  Ma WQ
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/06
Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces 期刊论文
ieee journal of quantum electronics, 2011, 卷号: 47, 期号: 12, 页码: 1475-1479
Zhang, YH; Ma, WQ; Cao, YL; Huang, JL; Wei, Y; Cui, K; Shao, J
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015108
作者:  Wang H;  Zhao DG;  Zhang SM;  Yang H;  Yang H
收藏  |  浏览/下载：168/40  |  提交时间：2010/03/08
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ
收藏  |  浏览/下载：72/0  |  提交时间：2010/03/08

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