Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers

	Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers
	Wei Y; Huo YH; Zhang YH; Huang JL; Ma WQ; Cui K
刊名	applied physics letters
	2011
卷号	98 期号:10 页码:article no.103507
关键词	MU-M DETECTOR TEMPERATURE GROWTH
ISSN号	0003-6951
通讯作者	ma, wq, chinese acad sci, inst semicond, lab nanooptoelect, pob 912, beijing 100083, peoples r china. wqma@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	china's national 973 research programme [2010cb327602]; natural science fund for innovative research group [61021003]
语种	英语
公开日期	2011-07-06 ; 2011-07-15
附注	we report a modified dots-in-a-well (dwell) infrared photodetector by inserting some very thin gaas or algaas layers into the inas dots. the photoluminescence (pl) measurements indicate that the modified dwell structure with the insertion layers (ils) of gaas has a larger peak intensity and a narrower pl linewidth than that without the ils. for the modified dwell detector with algaas ils, the peak detection wavelength reaches very long infrared window of 14.1 mu m. the peak detectivity d* is 1.1 x 10(8) cm hz(1/2)/w at 77 k under normal incidence infrared irradiation. (c) 2011 american institute of physics. [doi:10.1063/1.3563709]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21349]
专题	半导体研究所_纳米光电子实验室
推荐引用方式 GB/T 7714	Wei Y,Huo YH,Zhang YH,et al. Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers[J]. applied physics letters,2011,98(10):article no.103507.
APA	Wei Y,Huo YH,Zhang YH,Huang JL,Ma WQ,&Cui K.(2011).Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers.applied physics letters,98(10),article no.103507.
MLA	Wei Y,et al."Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers".applied physics letters 98.10(2011):article no.103507.