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| Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment 期刊论文 physica status solidi-rapid research letters, 2011, 卷号: 5, 期号: 2, 页码: 74-76 作者: You JB; Zhang XW 收藏  |  浏览/下载:49/4  |  提交时间:2011/07/05
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| Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503 作者: Dong Z; Huang BJ 收藏  |  浏览/下载:50/2  |  提交时间:2011/07/05
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| Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 4, 页码: art. no. 043709 作者: Zhang XW; Yin ZG; Song HP; You JB 收藏  |  浏览/下载:80/3  |  提交时间:2010/03/08
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| Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文 journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211 作者: Zhang SM 收藏  |  浏览/下载:92/4  |  提交时间:2010/08/12
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| Photoluminescence properties of Eu3+-doped ZnS nanocrystals prepared in a water/methanol solution 期刊论文 applied physics letters, 2002, 卷号: 80, 期号: 19, 页码: 3605-3607 Qu SC; Zhou WH; Liu FQ; Chen NF; Wang ZG; Pan HY; Yu DP 收藏  |  浏览/下载:91/9  |  提交时间:2010/08/12
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| Influence of precipitates on GaN epilayer quality 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 214-217 Kang JY; Huang QS; Wang ZG 收藏  |  浏览/下载:47/0  |  提交时间:2010/08/12
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| Influence of precipitates on GaN epilayer quality 会议论文 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Kang JY; Huang QS; Wang ZG 收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
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| MOCVD growth of cubic GaN: Materials and devices 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者: Zhao DG; Zhang SM 收藏  |  浏览/下载:17/0  |  提交时间:2010/10/29
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| Preparation and characterization of erbium doped sol-gel silica glasses 会议论文 conference on rare-earth-doped materials and devices iii, san jose, ca, jan 27-28, 1999 Lei HB; Yang QQ; Ou HY; Chen BW; Yu JZ; Wang QM; Xie DT; Wu JG; Xu DF; Xu GX 收藏  |  浏览/下载:14/0  |  提交时间:2010/10/29
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