Influence of precipitates on GaN epilayer quality

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Influence of precipitates on GaN epilayer quality
	Kang JY ; Huang QS ; Wang ZG
刊名	materials science and engineering b-solid state materials for advanced technology
	2000
卷号	75 期号:2-3 页码:214-217
关键词	precipitate GaN WDS TEM cathodoluminescence VAPOR-PHASE EPITAXY FILMS MECHANISM GROWTH
ISSN号	0921-5107
通讯作者	kang jy,xiamen univ,dept phys,xiamen 361005,peoples r china.
中文摘要	gan epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive x-ray spectroscopy and energy dispersive s-ray spectroscopy. precipitates were observed to mainly consist of o impurity whose strengths were weaker than surrounding matrix. the precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. the larger precipitates often joined to cracks in the tem specimens. the crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. yellow luminescence of the epilayers was imaged by cathodoluminescence. the distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (c) 2000 elsevier science s.a, all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12574]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kang JY,Huang QS,Wang ZG. Influence of precipitates on GaN epilayer quality[J]. materials science and engineering b-solid state materials for advanced technology,2000,75(2-3):214-217.
APA	Kang JY,Huang QS,&Wang ZG.(2000).Influence of precipitates on GaN epilayer quality.materials science and engineering b-solid state materials for advanced technology,75(2-3),214-217.
MLA	Kang JY,et al."Influence of precipitates on GaN epilayer quality".materials science and engineering b-solid state materials for advanced technology 75.2-3(2000):214-217.