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科研机构
半导体研究所 [9]
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期刊论文 [9]
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2011 [1]
2010 [1]
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半导体材料 [9]
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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:
Duan RF
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  |  
浏览/下载:80/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104
Hou QF (Hou Qi-Feng)
;
Wang XL (Wang Xiao-Liang)
;
Xiao
;
HL (Xiao Hong-Ling)
;
Wang CM (Wang Cui-Mei)
;
Yang CB (Yang Cui-Bai)
;
Li JM (Li Jin-Min)
收藏
  |  
浏览/下载:255/64
  |  
提交时间:2010/05/24
N-TYPE GAN
DEEP LEVELS
SELENIDE
DEFECTS
Narrowing of band gap and low-temperature spin glass behavior of FeNi co-doped ZnO nanowires
期刊论文
epl, 2009, 卷号: 87, 期号: 5, 页码: art. no. 57004
Iqbal J
;
Liu XF
;
Majid A
;
Yu DP
;
Yu RH
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  |  
浏览/下载:92/34
  |  
提交时间:2010/03/08
ROOM-TEMPERATURE
PHOTOLUMINESCENCE
FERROMAGNETISM
FILMS
SPINTRONICS
PRINCIPLES
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer
期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803
Fang CB (Fang Cebao)
;
Wang XL (Wang Xiaoliang)
;
Xiao HL (Xiao Hongling)
;
Hu GX (Hu Guoxin)
;
Wang CM (Wang Cuimei)
;
Wang XY (Wang Xiaoyan)
;
Li JP (Li Jianping)
;
Wang JX (Wang Junxi)
;
Li CJ (Li Chengji)
;
Zeng YP (Zeng Yiping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang Zanguo)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
deep defect
Optical and magnetic properties of ZnS nanoparticles doped with Mn2+
期刊论文
journal of crystal growth, 2005, 卷号: 282, 期号: 1-2, 页码: 179-185
Peng, WQ
;
Qu, SC
;
Cong, GW
;
Zhang, XQ
;
Wang, ZG
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  |  
浏览/下载:70/25
  |  
提交时间:2010/03/17
nanostructures
Violet/blue photoluminescence from CeO2 thin film
期刊论文
chinese science bulletin, 2003, 卷号: 48, 期号: 12, 页码: 1198-1200
Chai CL
;
Yang SY
;
Liu ZK
;
Liao MY
;
Chen NF
收藏
  |  
浏览/下载:253/3
  |  
提交时间:2010/08/12
cerium dioxide thin film
PL
violet/blue
CERIUM OXIDE
DEPOSITION
INTERFACE
EMISSION
SILICON
GROWTH
Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate
期刊论文
journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103
Xu HZ
;
Bell A
;
Wang ZG
;
Okada Y
;
Kawabe M
;
Harrison I
;
Foxon CT
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2010/08/12
gallium nitride
metalorganic vapor-phase epitaxy
photoluminescence
yellow luminescence
N-TYPE GAN
PERSISTENT PHOTOCONDUCTIVITY
THIN-FILMS
DOPED GAN
DEEP LEVELS
ORIGIN
PHOTOLUMINESCENCE
DEPENDENCE
VACANCIES
EPITAXY
Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE
期刊论文
journal of crystal growth, 2000, 卷号: 218, 期号: 1, 页码: 1-6
Xu HZ
;
Wang ZG
;
Kawabe M
;
Harrison I
;
Ansell BJ
;
Foxon CT
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/08/12
GaN
photoluminescence
optical quenching of photoconductivity
native defect level
molecular beam epitaxy
SINGLE-CRYSTAL GAN
I-N PHOTODIODES
HIGH-SPEED
PHOTOCONDUCTORS
ALXGA1-XN
SIMULATIONS
DETECTORS
SAPPHIRE
LAYERS
Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy
期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232
Xu HZ
;
Wang ZG
;
Harrison I
;
Bell A
;
Ansell BJ
;
Winser AJ
;
Cheng TS
;
Foxon CT
;
Kawabe M
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
GaN
photoluminescence
optical quenching of photoconductivity
native defect level
molecular beam epitaxy
N-TYPE GAN
DEEP-LEVEL DEFECTS
YELLOW LUMINESCENCE
MAGNETIC-RESONANCE
THIN-FILMS
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