Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy
	Xu HZ ; Wang ZG ; Harrison I ; Bell A ; Ansell BJ ; Winser AJ ; Cheng TS ; Foxon CT ; Kawabe M
刊名	journal of crystal growth
	2000
卷号	217 期号:3 页码:228-232
关键词	GaN photoluminescence optical quenching of photoconductivity native defect level molecular beam epitaxy N-TYPE GAN DEEP-LEVEL DEFECTS YELLOW LUMINESCENCE MAGNETIC-RESONANCE THIN-FILMS
ISSN号	0022-0248
通讯作者	kawabe m,univ tsukuba,inst appl phys,tsukuba,ibaraki 3058573,japan.
中文摘要	deep levels in undoped gan materials grown by modified molecular beam epitaxy (mbe) are investigated by photoluminescence (pl) and optical quenching of photoconductivity measurements. a broad band which extends from 2.1 to 3.0 ev with a maximum at about 2.7 ev is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 ev above the valence band, respectively. these levels are attributed to four holes trap levels existence in the material. the defects cannot be firmly identified at present. (c) 2000 elsevier science b.v, all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12496]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu HZ,Wang ZG,Harrison I,et al. Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy[J]. journal of crystal growth,2000,217(3):228-232.
APA	Xu HZ.,Wang ZG.,Harrison I.,Bell A.,Ansell BJ.,...&Kawabe M.(2000).Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy.journal of crystal growth,217(3),228-232.
MLA	Xu HZ,et al."Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy".journal of crystal growth 217.3(2000):228-232.