CORC

在结果中检索

CORC

浏览/检索结果: 共17条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system 期刊论文
crystengcomm, 2010, 卷号: 12, 期号: 11, 页码: 3936-3941
Song HP (Song Huaping); Guo Y (Guo Yan); Yang A (Yang Anli); Wei HY (Wei Hongyuan); Xu XQ (Xu Xiaoqing); Liu JM (Liu Jianming); Yang SY (Yang Shaoyan); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：23/0  |  提交时间：2010/11/14
Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study 期刊论文
european physical journal b, 2008, 卷号: 66, 期号: 4, 页码: 439-444
Shi HL; Duan Y
收藏  |  浏览/下载：151/26  |  提交时间：2010/03/08
Band gap narrowing in heavily B doped Si1-xGex strained layers 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 11, 页码: 6654-6659
Yao F (Yao Fei); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming)
收藏  |  浏览/下载：42/0  |  提交时间：2010/03/29
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载：166/71  |  提交时间：2010/03/29
ALN  IMPURITIES  DONOR  
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires 会议论文
icmat symposium on science and technologies of nanomaterials, singapore, singapore, dec 07-12, 2003
Zeng, XB; Liao, XB; Dai, ST; Wang, B; Xu, YY; Xiang, XB; Hu, ZH; Diao, HW; Kong, GL
收藏  |  浏览/下载：203/49  |  提交时间：2010/03/29
Synthesis and optical properties of europium-doped ZnS: Long-lasting phosphorescence from aligned nanowires 期刊论文
advanced functional materials, 2005, 卷号: 15, 期号: 11, 页码: 1883-1890
Cheng BC; Wang ZG
收藏  |  浏览/下载：105/18  |  提交时间：2010/03/17
Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition 期刊论文
acta physica sinica, 2004, 卷号: 53, 期号: 12, 页码: 4410-4413
Zeng XB; Liao XB; Bo W; Diao HW; Dai ST; Xiang XB; Chang XL; Xu YY; Hu ZH; Hao HY; Kong GL
收藏  |  浏览/下载：85/0  |  提交时间：2010/03/17
Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 35-38
Wang HL; Yang FH; Feng SL
收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 461-465
Gao F; Huang DD; Li JP; Lin YX; Kong MY; Sun DZ; Li JM; Lin LY
收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12

©版权所有 ©2017 CSpace - Powered by CSpace