Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition

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	Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition
	Zeng XB ; Liao XB ; Bo W ; Diao HW ; Dai ST ; Xiang XB ; Chang XL ; Xu YY ; Hu ZH ; Hao HY ; Kong GL
刊名	acta physica sinica
	2004
卷号	53 期号:12 页码:4410-4413
关键词	silicon nanowires
ISSN号	1000-3290
通讯作者	zeng, xb, chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china.
中文摘要	boron-doped ( b-doped) silicon nanowires have been successfully synthesized by plasma-enhanced chemical vapor deposition (pecvd) at 440degreesc using silane as the si source, diborane( b2h6) as the dopant gas and an as the catalyst. it is desirable to extend this technique to the growth of silicon nanowire pn junctions because pecvd enables immense chemical reactivity.
学科主题	半导体材料
收录类别	SCI
语种	中文
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8930]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zeng XB,Liao XB,Bo W,et al. Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition[J]. acta physica sinica,2004,53(12):4410-4413.
APA	Zeng XB.,Liao XB.,Bo W.,Diao HW.,Dai ST.,...&Kong GL.(2004).Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition.acta physica sinica,53(12),4410-4413.
MLA	Zeng XB,et al."Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition".acta physica sinica 53.12(2004):4410-4413.