Band gap narrowing in heavily B doped Si1-xGex strained layers

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	Band gap narrowing in heavily B doped Si1-xGex strained layers
	Yao F (Yao Fei) ; Xue CL (Xue Chun-Lai) ; Cheng BW (Cheng Bu-Wen) ; Wang QM (Wang Qi-Ming)
刊名	acta physica sinica
	2007
卷号	56 期号:11 页码:6654-6659
关键词	SiGe layer
ISSN号	issn: 1000-3290
通讯作者	yao, f, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: sindy-yf@semi.ac.cn
中文摘要	this paper presents a comprehensive study of the effect of heavy b doping and strain in si1-xgex strained layers. on the one hand, bandgap narrowing (bgn) will be generated due to the heavy doping, on the other hand, the dopant boron causes shrinkage in the lattice constant of sige materials, thus will compensate for part of the strain. taking the strain compensation of b into account for the first time and uesing the with semi-empirical method, the jain-roulston model is modified. and the real bgn distributed between the conduction and valence bands is calculated, which is important for the accurate design of sige hbts.
学科主题	半导体材料
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9190]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yao F ,Xue CL ,Cheng BW ,et al. Band gap narrowing in heavily B doped Si1-xGex strained layers[J]. acta physica sinica,2007,56(11):6654-6659.
APA	Yao F ,Xue CL ,Cheng BW ,&Wang QM .(2007).Band gap narrowing in heavily B doped Si1-xGex strained layers.acta physica sinica,56(11),6654-6659.
MLA	Yao F ,et al."Band gap narrowing in heavily B doped Si1-xGex strained layers".acta physica sinica 56.11(2007):6654-6659.