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CORC

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Electron spin dynamics in heavily Mn-doped (Ga,Mn)As 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262109
作者:  Chen L;  Zhang XH
收藏  |  浏览/下载：63/6  |  提交时间：2011/07/05
Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements 期刊论文
semiconductor science and technology, 2008, 卷号: 23, 期号: 7, 页码: art. no. 075021
Ruan, XZ; Sun, BQ; Ji, Y; Yang, W; Zhao, JH; Xu, ZY
收藏  |  浏览/下载：56/4  |  提交时间：2010/03/08
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH
收藏  |  浏览/下载：85/0  |  提交时间：2010/04/11
Efficiently producing single-walled carbon nanotube rings and investigation of their field emission properties 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2355-2361
Song L (Song Li); Ci LJ (Ci Lijie); Jin CH (Jin Chuanhong); Tan PH (Tan Pingheng); Sun LF (Sun Lianfeng); Ma WJ (Ma Wenjun); Liu LF (Liu Lifeng); Liu DF (Liu Dongfang); Zhang ZX (Zhang Zengxing); Xiang YJ (Xiang Yanjuan); Luo SD (Luo Shudong); Zhao XW (Zhao Xiaowei); Shen J (Shen Jun); Zhou JJ (Zhou Jianjun); Zhou WY (Zhou Weiya); Xie SS (Xie Sishen)
收藏  |  浏览/下载：67/0  |  提交时间：2010/04/11
Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008
作者:  Yang XH
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11
Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145
Gong Z; Niu ZC; Fang ZD
收藏  |  浏览/下载：72/0  |  提交时间：2010/04/11
Selectively excited photoluminescence of GaAs1-xNx single quantum wells 期刊论文
journal of applied physics, 2003, 卷号: 94, 期号: 8, 页码: 4863-4865
作者:  Tan PH
收藏  |  浏览/下载：142/0  |  提交时间：2010/08/12
Effects of annealing ambient on the formation of compensation defects in InP 期刊论文
journal of applied physics, 2003, 卷号: 93, 期号: 2, 页码: 930-932
Deng AH; Mascher P; Zhao YW; Lin LY
收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12
Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts 期刊论文
journal of physics d-applied physics, 2002, 卷号: 35, 期号: 20, 页码: 2648-2651
作者:  Zhang SM;  Zhao DG
收藏  |  浏览/下载：59/0  |  提交时间：2010/08/12
Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys 期刊论文
applied physics letters, 2001, 卷号: 79, 期号: 12, 页码: 1810-1812
Li Q; Xu SJ; Cheng WC; Xie MH; Tong SY; Che CM; Yang H
收藏  |  浏览/下载：79/7  |  提交时间：2010/08/12

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