Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

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	Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
	Li Q ; Xu SJ ; Cheng WC ; Xie MH ; Tong SY ; Che CM ; Yang H
刊名	applied physics letters
	2001
卷号	79 期号:12 页码:1810-1812
关键词	QUANTUM DOTS TEMPERATURE PHOTOLUMINESCENCE ACTIVATION DIODES
ISSN号	0003-6951
通讯作者	xu sj,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china.
中文摘要	temperature-dependent photoluminescence measurements have been carried out in zinc-blende ingan epilayers grown on gaas substrates by metalorganic vapor-phase epitaxy. an anomalous temperature dependence of the peak position of the luminescence band was observed. considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. a good agreement between the theory and the experiment is achieved. at high temperatures, the model can be approximated to the band-tail-state emission model proposed by eliseev et al. [appl. phys. lett. 71, 569 (1997)]. (c) 2001 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12094]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Q,Xu SJ,Cheng WC,et al. Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys[J]. applied physics letters,2001,79(12):1810-1812.
APA	Li Q.,Xu SJ.,Cheng WC.,Xie MH.,Tong SY.,...&Yang H.(2001).Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys.applied physics letters,79(12),1810-1812.
MLA	Li Q,et al."Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys".applied physics letters 79.12(2001):1810-1812.