Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts

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	Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts
	Zhang SM; Zhao DG
刊名	journal of physics d-applied physics
	2002
卷号	35 期号:20 页码:2648-2651
关键词	RESISTANCE OHMIC CONTACTS FIELD-EFFECT TRANSISTOR SINGLE-CRYSTAL GAN MICROWAVE PERFORMANCE STABILITY BARRIER DIODES
ISSN号	0022-3727
通讯作者	sun yp,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china.
中文摘要	the schottky behaviour of ni/au contact on n-gan was investigated under various annealing conditions by current-voltage (i-v) measurements. a non-linear fitting method was used to extract the contact parameters from the i-v characteristic curves. experimental results indicate that high quality schottky contact with a barrier height and ideality factor of 0.86 +/- 0.02 ev and 1.19 +/- 0.02 ev, respectively, can be obtained under 5 min annealing at 600degreesc in n-2 ambience.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11740]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang SM,Zhao DG. Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts[J]. journal of physics d-applied physics,2002,35(20):2648-2651.
APA	Zhang SM,&Zhao DG.(2002).Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts.journal of physics d-applied physics,35(20),2648-2651.
MLA	Zhang SM,et al."Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts".journal of physics d-applied physics 35.20(2002):2648-2651.