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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287 Li Z (Li Z.); Li CJ (Li C. J.) 收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11 DLTS  defects  detectors  sensors  current transient  SILICON DETECTORS   Nanocrystalline silicon films with high conductivity and the application for PIN solar cells 期刊论文 vacuum, 2006, 卷号: 81, 期号: 1, 页码: 126-128 Min C (Cui Min); Zhang WJ (Zhang Weija); Wang TM (Wang Tianmin); Jin F (Jin Fei); Li GH (Li Guohua); Ding K (Ding Kun) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 nc-Si : H  conductivity  PECVD  films  solar cells   Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文 journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13 Shen XM; Feng G; Zhang BS; Duan LH; Wang YT; Yang H 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 scanning electron microscopy  X-ray diffraction  Metalorganic vapor phase epitaxy  selective area growth  gallium nitride  CUBIC GAN  OVERGROWN GAN  DEPOSITION  GAAS(100)   X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文 journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32 Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 x-ray diffraction  strain relaxation  GaNxAs1-x/GaAs  photoluminescence  RHEED  MOLECULAR-BEAM EPITAXY  TEMPERATURE PULSED OPERATION  BAND-GAP ENERGY  NITROGEN  GAASN  GANXAS1-X  GAAS1-XNX  ALLOYS  LASERS  LAYERS   The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 期刊论文 thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 237-240 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 metalorganic chemical vapor deposition  cubic GaN  hexagonal phase content  4-circle X-ray double crystal diffraction  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  THIN-FILMS  SILICON  GAAS   The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 metalorganic chemical vapor deposition  cubic GaN  hexagonal phase content  4-circle X-ray double crystal diffraction  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  THIN-FILMS  SILICON  GAAS