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浏览/检索结果: 共9条，第1-9条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of pH and NaF addition on corrosion of Zr-based bulk metallic glass in Na2SO4-containing solution 期刊论文 INTERMETALLICS, 2021, 卷号: 129, 页码: 12 作者:  Qiu, Zhang-wei-jia;  Li, Zheng-kun;  Fu, Hua-meng;  Zhang, Long;  Zhu, Zheng-wang 收藏  |  浏览/下载：61/0  |  提交时间：2021/03/15 Metallic glass  Zirconium  Corrosion behaviour  NaF  Passivation   Investigation on the reduced critical breakdown field of hot CO2 gas and CO2-based mixtures 会议论文 作者:  Chen, Zhexin;  Niu, Chunping;  Zhang, Hantian;  Sun, Hao;  Wu, Yi 收藏  |  浏览/下载：101/0  |  提交时间：2019/12/02 reduced critical breakdown field  EEDF  Boltzmann transport equation  electron scattering cross sections  species compositions   Current-driven domain wall motion enhanced by the microwave field 期刊论文 JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 2 作者:  Ceng ZM(曾中明) 收藏  |  浏览/下载：19/0  |  提交时间：2014/12/02 FERROMAGNETIC NANOWIRE  SHIFT   Prediction of the critical reduced electric field strength for carbon dioxide and its mixtures with 50% O-2 and 50% H-2 from Boltzmann analysis for gas temperatures up to 3500K at atmospheric pressure 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: [db:dc_citation_issue] 作者:  Zhao, Hu;  Li, Xingwen;  Jia, Shenli;  Murphy, Anthony B. 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/03 dielectric breakdown  critical reduced electric field strength  electron energy distribution function   A new analytical model for the surface field distribution and optimization of thin film SOI RESURF devices 期刊论文 international journal of electronics, 2002 He, J; Zhang, X; Wang, YY 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10 BREAKDOWN VOLTAGE  MOSFETS   A concise analytical model for the surface field distribution of TFSOI RESURF devices including interface charge effect 期刊论文 chinese journal of electronics, 2002 He, J; Zhang, X; Huang, R; Wang, YY 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 thin film silicon-on-insulator (TFSOI)  reduced surface field (RESURF)  power devices  surface field  interface charge  breakdown voltage  BREAKDOWN VOLTAGE  SOI  MOSFETS  FILM   TFSOI RESURF功率器件表面电场分布和优化设计的新解析模型 期刊论文 半导体学报, 2001 何进; 张兴; 黄如; 王阳元 收藏  |  浏览/下载：3/0  |  提交时间：2015/10/23 TFSOI RESURF器件  表面电场分布  电势分布  击穿电压  优化设计   Novel analytical model for surface electric field distribution and optimization of TFSOI RESURF devices 期刊论文 pan tao ti hsueh paochinese journal of semiconductors, 2001 He, Jin; Zhang, Xing; Huang, Ru; Wang, Yang-Yuan 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/17 Analytical model for the ideal breakdown voltage and optimum doping profile of SOI RESURF LDMOS 期刊论文 chinese journal of electronics, 2001 He, J; Zhang, X; Huang, R; Wang, YY 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 LDMOS  breakdown voltage  silicon-on-insulator (SOI) reduced surface field  (RESURF) structure  optimum doping profile  power device  high voltage power integration circuits (HVIC)  DEVICES