Analytical model for the ideal breakdown voltage and optimum doping   profile of SOI RESURF LDMOS

CORC > 北京大学 > 信息科学技术学院

	Analytical model for the ideal breakdown voltage and optimum doping profile of SOI RESURF LDMOS
	He, J ; Zhang, X ; Huang, R ; Wang, YY
刊名	chinese journal of electronics
	2001
关键词	LDMOS breakdown voltage silicon-on-insulator (SOI) reduced surface field (RESURF) structure optimum doping profile power device high voltage power integration circuits (HVIC) DEVICES
英文摘要	An analytical model for the ideal breakdown voltage and the optimum doping profile for SOI RESURF LDMOS has been proposed in this paper. The analytical expressions of the ideal breakdown voltage and critical electric field at breakdown have been obtained. The dependence of the optimum doping profile on the device structure parameters such as the thickness of the silicon film and buried oxide layer has also been derived. For a given breakdown voltage, the optimum doping profile has a trade-off choice between the maximum doping concentration and slope for minimization of LDMOS on-resistance.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000168485300016&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 0; ARTICLE; 2; 210-213; 10
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291577]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, J,Zhang, X,Huang, R,et al. Analytical model for the ideal breakdown voltage and optimum doping profile of SOI RESURF LDMOS[J]. chinese journal of electronics,2001.
APA	He, J,Zhang, X,Huang, R,&Wang, YY.(2001).Analytical model for the ideal breakdown voltage and optimum doping profile of SOI RESURF LDMOS.chinese journal of electronics.
MLA	He, J,et al."Analytical model for the ideal breakdown voltage and optimum doping profile of SOI RESURF LDMOS".chinese journal of electronics (2001).