Kinetic study of MOCVD III-V quaternary antimonides

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Kinetic study of MOCVD III-V quaternary antimonides
	Peng RW ; Wei GY ; Wu W ; Wang ZG
刊名	rare metals
	1999
卷号	18 期号:1 页码:16-20
关键词	kinetic study MOCVD III-V quaternary antimonide photodetector EPITAXIAL-GROWTH
ISSN号	1001-0521
通讯作者	peng rw,chinese acad sci,shanghai inst met,shanghai 200050,peoples r china.
中文摘要	the kinetics of mocvd gainassb and algaassb was studied by the growth rate as a function of growth temperature and partial pressure of iii and v mo species. the diffusion theory was used to explain the mass transport processes in mocvd iii-v quaternary antimonides. on the basis of the discussion about their growth kinetics and epilayer properties, the good quality multi-epilayers of these two quaternary antimonides and their photodetectors and arrays with wavelength of 1.8 similar to 2.3 mu m and detectivities of d* > 10(9) cm hz(1/2) w-1 were obtained.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12740]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Peng RW,Wei GY,Wu W,et al. Kinetic study of MOCVD III-V quaternary antimonides[J]. rare metals,1999,18(1):16-20.
APA	Peng RW,Wei GY,Wu W,&Wang ZG.(1999).Kinetic study of MOCVD III-V quaternary antimonides.rare metals,18(1),16-20.
MLA	Peng RW,et al."Kinetic study of MOCVD III-V quaternary antimonides".rare metals 18.1(1999):16-20.