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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Tight-binding model for electronic structure of hexagonal boron phosphide monolayer and bilayer 期刊论文 Journal of Physics: Condensed Matter, 2019, 卷号: Vol.31 No.28, 页码: 285501 作者:  Ying Wang;  Changbao Huang;  Dong Li;  Ping Li;  Jiangying Yu 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/13 Tight-binding model for electronic structure of hexagonal boron phosphide monolayer and bilayer 期刊论文 JOURNAL OF PHYSICS-CONDENSED MATTER, 2019, 卷号: Vol.31 No.28 作者:  Wang, Y;  Huang, CB;  Li, D;  Li, P;  Yu, JY 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/17 hexagonal boron phosphide  first-principle  tight-binding approximation  electronic structure   Tight-binding model for electronic structure of hexagonal boron phosphide monolayer and bilayer. 期刊论文 Journal of physics. Condensed matter : an Institute of Physics journal, 2019 作者:  Ying Wang;  Changbao Huang;  Dong Li;  Ping Li;  Jiangying Yu 收藏  |  浏览/下载：18/0  |  提交时间：2019/12/17 electronic structure  first-principle  hexagonal boron phosphide  tight-binding approximation   Tight-binding model for electronic structure of hexagonal boron phosphide monolayer and bilayer 期刊论文 Journal of Physics: Condensed Matter, 2019, 卷号: Vol.31 No.28, 页码: 285501 作者:  Wang, Y;  Huang, CB;  Li, D;  Li, P;  Yu, JY 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/17 Stress- and electric-field-induced band gap tuning in hexagonal boron phosphide layers 期刊论文 JOURNAL OF PHYSICS-CONDENSED MATTER, 2019, 卷号: Vol.31 No.46 作者:  Wang, Y;  Huang, CB;  Li, D;  Huang, F;  Zhang, XY 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 hexagonal boron phosphide  first-principles  stress  electric field  band gap   Non-metallic catalysts useful for selective oxidation of methane comprises e.g. hexagonal boron nitride, cubic boron nitride, rhombohedral boron nitride, boron phosphate and boron phosphide and surface functionalization to optimize surface. 专利 申请日期: 2018-01-01, 公开日期: 2018-04-06 作者:  LU A WANG Y 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/02 First-principles prediction of the electronic structure and carrier mobility in hexagonal boron phosphide sheet and nanoribbons 期刊论文 Journal of Physical Chemistry C, 2016, 卷号: 120, 期号: 43, 页码: 25037-25042 作者:  Zeng, Bowen;  Li, Mingjun;  Zhang, Xiaojiao;  Yi, Yougen;  Fu, Liping 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/03 Group-III nitride semiconductor light-emitting device and manufacturing method for the same 专利 专利号: US20010036678A1, 申请日期: 2001-11-01, 公开日期: 2001-11-01 作者:  UDAGAWA, TAKASHI 收藏  |  浏览/下载：14/0  |  提交时间：2019/12/30