| Group-III nitride semiconductor light-emitting device and manufacturing method for the same | |
| UDAGAWA, TAKASHI | |
| 2001-11-01 | |
| 著作权人 | SHOWA DENKO K.K. |
| 专利号 | US20010036678A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Group-III nitride semiconductor light-emitting device and manufacturing method for the same |
| 英文摘要 | The present invention provides an n-side-up type group III nitride semiconductor light-emitting device fabricated from an epitaxial wafer having group III nitride semiconductor crystal layers with different crystal structures, i.e., cubic and hexagonal systems. A buffer layer of a boron phosphide (BP) based material, a cubic p-type single crystal layer of a BP based material, a cubic p-type group III nitride semiconductor crystal layer, and a hexagonal n-type group III nitride semiconductor crystal layer are successively formed on a substrate of a p-type conduction Si single crystal. The temperatures for the formation of the above-mentioned buffer layer, cubic p-type group III nitride semiconductor crystal layer, and a hexagonal n-type group III nitride semiconductor crystal layer are desirably in preferred ranges. |
| 公开日期 | 2001-11-01 |
| 申请日期 | 2001-04-20 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/56503]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHOWA DENKO K.K. |
| 推荐引用方式 GB/T 7714 | UDAGAWA, TAKASHI. Group-III nitride semiconductor light-emitting device and manufacturing method for the same. US20010036678A1. 2001-11-01. |
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