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Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载：15/0  |  提交时间：2020/07/11
Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 249-254
作者:  Yongwei Chang;  Jiexin Luo;  Jing Chen;  Lingda Xu;  Zhan Chai
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/13
Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Li-Hui; Lin, Yu-Shan; Liu, Xi-Wen; Liao, Jih-Chien; Lin, Chien-Yu; Lien, Chen-Hsin; Chang, Kuan-Chang; Zhang, Sheng-Dong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Cheng, Ran; Yin, Longxiang; Wu, Heng; Yu, Xiao; Zhang, Yanyan; Zheng, Zejie; Wu, Wangran; Chen, Bing; Ye, Peide D.; Liu, Xiaoyan; Zhao, Yi
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit 期刊论文
SOLID-STATE ELECTRONICS, 2017
Al-Ameri, Talib; Georgiev, Vihar P.; Sadi, Toufik; Wang, Yijiao; Adamu-Lema, Fikru; Wang, Xingsheng; Amoroso, Salvatore M.; Towie, Ewan; Brown, Andrew; Asenov, Asen
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017
Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03
Positive bias temperature instability degradation of buried InGaAsChannel n-MOSFETs with InGaP barrier layer and Al2O3 dielectric 会议论文
作者:  Wang SK(王盛凯);  Chang HD(常虎东);  Sun B(孙兵)
收藏  |  浏览/下载：5/0  |  提交时间：2017/05/18
Simulation study of an imulation study of an enhancement -mode n-type InGaAs MOSFETs with a low zero bias off-current 会议论文
作者:  Wang SK(王盛凯);  Chang HD(常虎东);  Sun B(孙兵)
收藏  |  浏览/下载：9/0  |  提交时间：2017/05/18
Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing 期刊论文
Materials, 2016
作者:  Luo J(罗军);  Zhao C(赵超)
收藏  |  浏览/下载：6/0  |  提交时间：2017/05/09
脉冲宽度对核电磁脉冲烧毁RS触发器效应的影响 期刊论文
2016, 2016
米国浩; 杜正伟; 曹雷团; 吴强; 陈曦; Mi Guohao; Du Zhengwei; Cao Leituan; Wu Qiang; Chen Xi
收藏  |  浏览/下载：3/0

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