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	Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs
	Yongwei Chang; Jiexin Luo; Jing Chen; Lingda Xu; Zhan Chai; Shuo Wang; Yemin Dong; Xi Wang
刊名	IEEE Transactions on Electron Devices
	2019
卷号	Vol.66 No.1页码:249-254
关键词	MOSFET circuits Integrated circuit modeling Semiconductor device modeling Radio frequency MOSFET Analytical models Mathematical model Body contact compact model floating body effects (FBEs) impact ionization partially depleted silicon-on-insulator (PD-SOI) radio frequency (RF) tunnel diode body contact (TDBC)
ISSN号	0018-9383;1557-9646
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4605912
专题	湖南大学
作者单位	State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
推荐引用方式 GB/T 7714	Yongwei Chang,Jiexin Luo,Jing Chen,et al. Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs[J]. IEEE Transactions on Electron Devices,2019,Vol.66 No.1:249-254.
APA	Yongwei Chang.,Jiexin Luo.,Jing Chen.,Lingda Xu.,Zhan Chai.,...&Xi Wang.(2019).Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs.IEEE Transactions on Electron Devices,Vol.66 No.1,249-254.
MLA	Yongwei Chang,et al."Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs".IEEE Transactions on Electron Devices Vol.66 No.1(2019):249-254.

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