Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing | |
Luo J(罗军); Zhao C(赵超) | |
刊名 | Materials |
2016-04-01 | |
文献子类 | 期刊论文 |
英文摘要 | The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. |
内容类型 | 期刊论文 |
源URL | [http://159.226.55.106/handle/172511/16228] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Luo J,Zhao C. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing[J]. Materials,2016. |
APA | Luo J,&Zhao C.(2016).Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.Materials. |
MLA | Luo J,et al."Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing".Materials (2016). |
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