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CORC

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Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 卷号: 976, 页码: 10
作者:  Peng, Lisha;  Shen, Wanzeng;  Feng, Anhui;  Liu, Yan;  Gao, Daqing
收藏  |  浏览/下载：29/0  |  提交时间：2021/12/09
Dynamical Channel Pruning by Conditional Accuracy Change for Deep Neural Networks 期刊论文
IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS, 2020, 卷号: 无, 期号: 无, 页码: 无
作者:  Chen, Zhiqiang;  Xu, Ting-Bing;  Du, Changde;  Liu, Cheng-Lin;  He, Huiguang
收藏  |  浏览/下载：58/0  |  提交时间：2021/01/27
A novel pencil beam model for carbon-ion dose calculation derived from Monte Carlo simulations 期刊论文
PHYSICA MEDICA-EUROPEAN JOURNAL OF MEDICAL PHYSICS, 2018, 卷号: 55, 页码: 15-24
作者:  Zhang, Hui;  Dai, Zhongying;  Liu, Xinguo;  Chen, Weiqiang;  Ma, Yuanyuan
收藏  |  浏览/下载：58/0  |  提交时间：2019/10/09
A novel pencil beam model for carbon-ion dose calculation derived from Monte Carlo simulations 期刊论文
PHYSICA MEDICA-EUROPEAN JOURNAL OF MEDICAL PHYSICS, 2018, 卷号: 55, 页码: 15-24
作者:  Zhang, Hui;  Dai, Zhongying;  Liu, Xinguo;  Chen, Weiqiang;  Ma, Yuanyuan
收藏  |  浏览/下载：26/0  |  提交时间：2018/12/12
Compact Model for Double-Gate Tunnel FETs With Gate-Drain Underlap 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248
作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining;  Yu, Zhonghua;  Lin, Xinnan
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/15
Compact Model for Double-Gate Tunnel FETs with Gate-Drain Underlap 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248
作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining;  Yu, Zhonghua;  Lin, Xinnan
收藏  |  浏览/下载：0/0  |  提交时间：2020/11/14
An Accurate Analytical Current Model of Double-gate Heterojunction Tunneling FET 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 938-944
作者:  Guan, Yunhe;  Li, Zunchao;  Zhang, Wenhao;  Zhang, Yefei
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26
Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017
Chang, Pengying; Liu, Xiaoyan; Di, Shaoyan; Du, Gang
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03
Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers 期刊论文
Journal of Semiconductors, 2017, 卷号: Vol.38 No.2, 页码: 024004
作者:  Dai,Yuehua;  Xu,Huifang
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/22
A Physics-Based Compact Model for Symmetrical Double-Gate Polysilicon Thin-Film Transistors 期刊论文
2017, 卷号: 64, 期号: 5, 页码: 2221
作者:  Yu, Fei[1,2];  Deng, Wanling[1];  Huang, Junkai[1];  Ma, Xiaoyu[1];  Liou, Juin J.[3]
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/06

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