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| Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs 期刊论文
Microelectronic Engineering, 2017
作者: Zhu HL(朱慧珑) ; Xu QX(徐秋霞); Li JF(李俊峰); Zhao C(赵超); Henry Homayoun Radamson
  收藏 | 浏览/下载：48/0 | 提交时间：2018/07/09 |
| Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors 期刊论文
Nanoscale Research Letters, 2017
作者: Wang GL(王桂磊); Ye TC(叶甜春); Henry Homayoun Radamson; Zhao C(赵超); Zhu HL(朱慧珑)
收藏 | 浏览/下载：12/0 | 提交时间：2018/07/05 |
| FOI FinFET with Ultra-low Parasitic Resistance Enabled by Fully Metallic Source and Drain Formation on Isolated Bulk-Fin 会议论文
作者: Wu ZH(吴振华); Luo J(罗军); Meng LK(孟令款); Zhang QZ(张青竹); Li YD(李昱东)
收藏 | 浏览/下载：32/0 | 提交时间：2017/05/19 |
| Integration of Selective Epitaxial Growth of SiGe/Ge layers in 14nm Node FinFETs 期刊论文
ECS Transactions, 2016
作者: Yin HX(殷华湘); Wang GL(王桂磊); Luo J(罗军); Qin ZL(秦长亮); Cui HS(崔虎山)
收藏 | 浏览/下载：17/0 | 提交时间：2017/05/09 |
| Impact of Continuing Scaling on the Device Performance of 3D Cylindrical Junction-less Charge Trapping Memory 期刊论文
Journal of Semiconductors, 2015
作者: Ye TC(叶甜春); Li CL(李春龙); Tang ZY(唐兆云); Xu Q(徐强); Hong PZ(洪培真)
收藏 | 浏览/下载：16/0 | 提交时间：2016/06/03 |
| Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs 期刊论文
Solid-State Electronics, 2015
作者: Li JF(李俊峰); Wang GL(王桂磊); Xu YF(徐烨峰); Luo J(罗军); Guo YL(郭奕栾)
收藏 | 浏览/下载：15/0 | 提交时间：2016/05/31 |
| Low-temperature post-deposition annealing investigation for 3D 期刊论文
Applied Physics A Materials Science & Precessing, 2015
作者: Liu M(刘明); Ye TC(叶甜春); Li XK(李新开); Han YL(韩宇龙); Jin L(靳磊)
收藏 | 浏览/下载：12/0 | 提交时间：2016/06/03 |
| Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current 期刊论文
APPLIED PHYSICS LETTERS, 2014
作者: Liu M(刘明); Long SB(龙世兵); Liu Q(刘琦); Yao ZH(姚志宏); Li L(李泠)
收藏 | 浏览/下载：14/0 | 提交时间：2015/04/14 |
| Direct Observation of Conversion between Threshold Switching and Memory Switching Induced by Conductive Channel Morphology 期刊论文
Advanced Funcitonal Materials, 2014, 期号: 36, 页码: 5679-5686
作者: Liu Q(刘琦); Lv HB(吕杭炳); Bi C(毕冲); Huo ZL(霍宗亮); Li L(李泠)
收藏 | 浏览/下载：22/0 | 提交时间：2015/04/14 |
| Metal Floating Gate Memory Device with SiO2/HfO2 Dual-layer as Engineered Tunneling Barrier 期刊论文
Electron Device Letters, 2014
作者: Han YL(韩宇龙); Chen GX(陈国星); Huo ZL(霍宗亮); Jin L(靳磊); Li XK(李新开)
收藏 | 浏览/下载：11/0 | 提交时间：2015/04/15 |
