Direct Observation of Conversion between Threshold Switching and Memory Switching Induced by Conductive Channel Morphology | |
Liu Q(刘琦); Lv HB(吕杭炳); Bi C(毕冲); Huo ZL(霍宗亮); Li L(李泠); Liu M(刘明); Li CF(李丛飞); Long SB(龙世兵); Sun HT(孙海涛) | |
刊名 | Advanced Funcitonal Materials |
2014-07-14 | |
期号 | 36页码:5679-5686 |
英文摘要 | Volatile threshold switching (TS) and nonvolatile memory switching (MS) are two typical resistance switching (RS) phenomena in oxides, which could form the basis for memory, analog circuits and neuromorphic applications. Interestingly, TS and MS can be coexistent and converted in a single device under the suitable external excitation. However, the origin of the transition from TS to MS is still unclear due to the lack of direct experimental evidences. Here, we directly observe the conversion bet |
语种 | 英语 |
公开日期 | 2015-04-14 |
内容类型 | 期刊论文 |
源URL | [http://10.10.10.126/handle/311049/12470] |
专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
通讯作者 | Liu M(刘明) |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Liu Q,Lv HB,Bi C,et al. Direct Observation of Conversion between Threshold Switching and Memory Switching Induced by Conductive Channel Morphology[J]. Advanced Funcitonal Materials,2014(36):5679-5686. |
APA | Liu Q.,Lv HB.,Bi C.,Huo ZL.,Li L.,...&Sun HT.(2014).Direct Observation of Conversion between Threshold Switching and Memory Switching Induced by Conductive Channel Morphology.Advanced Funcitonal Materials(36),5679-5686. |
MLA | Liu Q,et al."Direct Observation of Conversion between Threshold Switching and Memory Switching Induced by Conductive Channel Morphology".Advanced Funcitonal Materials .36(2014):5679-5686. |
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