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CORC

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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703
Wang Y (Wang Y.); Jiang Y (Jiang Y.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/14
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:  Wei TB;  Wei XC;  Duan RF
收藏  |  浏览/下载：84/6  |  提交时间：2010/03/08
Influence of different interlayers on growth mode and properties of InN by MOVPE 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241
Zhang, RQ; Liu, XL; Kang, TT; Hu, WG; Yang, SY; Jiao, CM; Zhu, QS
收藏  |  浏览/下载：51/3  |  提交时间：2010/03/08
Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 1, 页码: 1-4
作者:  Liu Xingfang;  Zhao Yongmei
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载：167/71  |  提交时间：2010/03/29
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Effect of small-angle scattering on the integer quantum Hall plateau 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 436-438
Shu Q; Lin YW; Xing XD; Yao JH; Pi B; Shu YC; Wang ZG; Xu JJ
收藏  |  浏览/下载：266/7  |  提交时间：2010/04/11
Growth of aligned single-walled carbon nanotubes under ac electric fields through floating catalyst chemical vapour deposition 期刊论文
chinese physics, 2005, 卷号: 14, 期号: 10, 页码: 2068-2076
作者:  Tan PH
收藏  |  浏览/下载：153/16  |  提交时间：2010/03/17
Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum 期刊论文
chinese optics letters, 2004, 卷号: 2, 期号: 6, 页码: 359-361
作者:  Wang Wei;  Wang Wei
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/23
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260
作者:  
收藏  |  浏览/下载：84/5  |  提交时间：2010/08/12

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