Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

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	Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum
	Wang Wei; Wang Wei
刊名	chinese optics letters
	2004
卷号	2 期号:6 页码:359-361
中文摘要	a kind of novel broad-band superluminescent diodes (slds) using graded tensile-strained bulk ingaas is developed. the graded tensile-strained bulk ingaas is obtained by changing only group-iii trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. at the injection current of 200 ma, the fabricated slds with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mw, respectively.
英文摘要	a kind of novel broad-band superluminescent diodes (slds) using graded tensile-strained bulk ingaas is developed. the graded tensile-strained bulk ingaas is obtained by changing only group-iii trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. at the injection current of 200 ma, the fabricated slds with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mw, respectively.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:35导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:05:35z (gmt). no. of bitstreams: 1 4627.pdf: 205457 bytes, checksum: a685f29cbdfb3bae6b78921692eefb0c (md5) previous issue date: 2004; center of optoelectronics research & development, institute of semiconductors, chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17233]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Wei,Wang Wei. Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum[J]. chinese optics letters,2004,2(6):359-361.
APA	Wang Wei,&Wang Wei.(2004).Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum.chinese optics letters,2(6),359-361.
MLA	Wang Wei,et al."Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum".chinese optics letters 2.6(2004):359-361.