Growth of aligned single-walled carbon nanotubes under ac electric fields through floating catalyst chemical vapour deposition
Tan PH
刊名chinese physics
2005
卷号14期号:10页码:2068-2076
关键词carbon nanotube
ISSN号1009-1963
通讯作者dou, xy, chinese acad sci, inst phys, pob 603, beijing 100080, peoples r china. 电子邮箱地址: wyzhou@aphy.iphy.ac.cn
中文摘要through floating catalyst chemical vapour deposition(cvd) method, well-aligned isolated single-walled carbon nanotubes (swcnts) and their bundles were deposited on the metal electrodes patterned on the sio2/si surface under ac electric fields at relatively low temperature(280 degrees c). it was indicated that swcnts were effectively aligned under ac electric fields after they had just grown in the furnace. the time for a swcnt to be aligned in the electric field and the effect of gas flow were estimated. polarized raman scattering was performed to characterize the aligned structure of swcnts. this method would be very useful for the controlled fabrication and preparation of swcnts in practical applications.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-17
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/8480]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Tan PH. Growth of aligned single-walled carbon nanotubes under ac electric fields through floating catalyst chemical vapour deposition[J]. chinese physics,2005,14(10):2068-2076.
APA Tan PH.(2005).Growth of aligned single-walled carbon nanotubes under ac electric fields through floating catalyst chemical vapour deposition.chinese physics,14(10),2068-2076.
MLA Tan PH."Growth of aligned single-walled carbon nanotubes under ac electric fields through floating catalyst chemical vapour deposition".chinese physics 14.10(2005):2068-2076.
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