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	The effect of nonideal boundary condition on instability of THz plasma waves in quantum field-effect transistors 期刊论文 AIP Advances, 2022, 卷号: 12, 期号: 3 作者: Zhang, Li-Ping; Liu, Chen-Xiao; Feng, Jiang-Xu; Su, Jun-Yan 收藏 \| 浏览/下载：17/0 \| 提交时间：2022/04/21 Boundary conditions Capacitance Plasma diagnostics Plasma stability Plasma waves Terahertz waves Field-effect transistor Gate source capacitance Gate-drain capacitance In-field New mechanisms Nonideal Quantum effects Quantum field Quantum-hydrodynamic models THz waves
	A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design 会议论文 Guilin, China, June 4-6, 2021 作者: Cheng H(程贺); Zhang C(张超); Liu TF(刘铁锋); Xie C(谢闯); Yang ZJ(杨志家) 收藏 \| 浏览/下载：11/0 \| 提交时间：2022/02/04 ballistic transport compact model integrated-cricuit design sub-7 nm GAA MOSFET the source-drain tunneling
	Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文 Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9 作者: Cheng H(程贺); Liu TF(刘铁锋); Zhang C(张超); Liu ZF(刘志峰); Yang ZJ(杨志家) 收藏 \| 浏览/下载：15/0 \| 提交时间：2020/07/11 ballistic transport cylindrical gate-allaround (GAA) MOSFET compact model Wentzel-Kramers-Brillouin (WKB) approximation the source-to-drain tunneling
	Device scaling considerations for sub-90-nm 2-bit/cell split-gate flash memory cell 期刊论文 Solid-State Electronics, 2019, 卷号: 152, 页码: 46-52 作者: Xu, Zhaozhao; Liu, Donghua; Hu, Jun; Chen, Wenjie; Qian, Wensheng 收藏 \| 浏览/下载：2/0 \| 提交时间：2019/11/19 2-bit/cell Device-scaling Drain induced barrier lowering effects Source-side injection Split gates
	Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs 期刊论文 MODERN PHYSICS LETTERS B, 2018, 卷号: 32, 期号: 15 作者: Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/12/05 SOI FinFET threshold voltage (V-t) drive current short channel effect (SCE) swing transconductance (G(m)) drain-induced barrier lowering (DIBL) source/drain resistance (R-SD)
	The Security Protection of SiC MOSFET NPC Tri-level Converter 会议论文 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01 作者: Wu, Wenjun; Cai, Yuxi; Wang, Wenxuan; Cui, Dongjie 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/12/20 SiC MOSFET drain-source voltage over-current protection tri-level voltage balanced leakage current
	Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET 期刊论文 2018, 卷号: 9 作者: Yang, Zhaonian; Yang, Yuan; Yu, Ningmei; Liou, Juin J. 收藏 \| 浏览/下载：7/0 \| 提交时间：2019/12/20 band-to-band tunneling (BTBT) electrostatic discharge (ESD) tunnel field-effect transistor (TFET) Silicon-Germanium source drain (SiGe S D) technology computer aided design (TCAD)
	Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017 Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong 收藏 \| 浏览/下载：7/0 \| 提交时间：2017/12/03 Amorphous indium gallium zinc oxide Thin film transistors Source-drain parasitic resistance TiO2:Nb Films thickness THRESHOLD VOLTAGE ANATASE TIO2 PERFORMANCE SHIFT TFTS
	Fabrication and characterization of gate last Si MOSFETs with SiGe source and drain 学位论文 : KTH, 2017 作者: Christensen,Björn 收藏 \| 浏览/下载：4/0 \| 提交时间：2019/12/24 MOSFET fabrication gate last SiGe source and drain IDP gate epitaxy MOSFET fabrication gate last SiGe source and drain IDP gate epitaxy Electrical Engineering Electronic Engineering Information Engineering Elektroteknik och elektronik
	Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts 期刊论文 ELECTRONICS LETTERS, 2016 Zhang, Yi; Han, Dedong; Huang, Lingling; Dong, Junchen; Cong, Yingying; Cui, Guodong; Zhang, Xiaomi; Zhang, Xing; Zhang, Shengdong; Wang, Yi 收藏 \| 浏览/下载：5/0 \| 提交时间：2017/12/03 thin film transistors electrical contacts tin zinc compounds indium compounds tin compounds tin-doped zinc oxide thin-film transistors heterojunction source-drain contacts bottom gate top contact thin-film transistors glass substrate indium tin oxide thin films alumni zinc oxide thin films AZO thin films aluminium thin films AZO S-D electrode saturation mobility subthreshold slope on-off current ratio output characteristic parasitic resistance contact performance t

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