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Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter 会议论文
作者:  He, Hongyu;  Liu, Yuan;  Wang, Hao;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/05
Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 会议论文
9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Shenzhen, PEOPLES R CHINA, NOV 16-18, 2018
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/27
Drain Current Model Based on the Meyer-Neldel Rule for Polycrystalline ZnO Thin-Film Transistors at Different Temperatures 会议论文
24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Chengdu, PEOPLES R CHINA, JUL 04-07, 2017
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/27
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27
Analysis of 1/f Noise for Polycrystalline Silicon TFTs Considering Mobility Power-Law Parameter 会议论文
作者:  He, Hongyu;  Liu, Yuan;  Wang, Hao;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：16/0  |  提交时间：2019/12/05
Analysis of 1/f Noise for Polycrystalline Silicon TFTs Considering Mobility Power-Law Parameter 期刊论文
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016, 页码: 1-2
作者:  He, Hongyu*;  Liu, Yuan;  Wang, Hao;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/27
Simple leakage Current and 1/f Noise Expressions for Polycrystalline Silicon Thin-Film Transistors 会议论文
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Univ Hong Kong, Hong Kong, PEOPLES R CHINA, AUG 03-05, 2016
作者:  He, Hongyu*;  Deng, Wanling;  Liu, Yuan;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/27
Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文
IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 11, 页码: 4423-4431
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/27
1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime 期刊论文
ieee electron device letters, 2015
He, Hongyu; Zheng, Xueren; Zhang, Shengdong
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10

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