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	Drain Current Model Based on the Meyer-Neldel Rule for Polycrystalline ZnO Thin-Film Transistors at Different Temperatures
	He, Hongyu*; Liu, Yuan; Yan, Binghui; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong
	2017
会议名称	24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
会议日期	JUL 04-07, 2017
会议地点	Chengdu, PEOPLES R CHINA
会议录	2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)
URL标识	查看原文
ISSN号	1946-1550
WOS记录号	WOS:000426989100081
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/5689263
专题	南华大学
作者单位	[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.
推荐引用方式 GB/T 7714	He, Hongyu*,Liu, Yuan,Yan, Binghui,et al. Drain Current Model Based on the Meyer-Neldel Rule for Polycrystalline ZnO Thin-Film Transistors at Different Temperatures[C]. 见:24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). Chengdu, PEOPLES R CHINA. JUL 04-07, 2017.

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