1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility   Power-Law Parameter in Above-Threshold Regime

doi:10.1109/LED.2014.2378251

CORC > 北京大学 > 信息科学技术学院

	1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime
	He, Hongyu ; Zheng, Xueren ; Zhang, Shengdong
刊名	ieee electron device letters
	2015
关键词	Thin-film transistor (TFT) InGaZnO (IGZO) low frequency noise carrier mobility THIN-FILM TRANSISTORS LOW-FREQUENCY NOISE
DOI	10.1109/LED.2014.2378251
英文摘要	Analytical 1/f noise expressions are presented for amorphous InGaZnO thin-film transistors considering the well-known power-law parameter alpha in the mobility equation. The drain current noise power spectral density (PSD) is derived from Ghibaudo's carrier number fluctuation model. It is found that the parameter alpha clarifies the relationship between the drain current noise PSD and the drain current. The relationship is verified by the available experimental data.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000350334100024&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 2; ARTICLE; hongyuhe2018@yahoo.com; phxrzhen@scut.edu.cn; zhangsd@pku.edu.cn; 2; 156-158; 36
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151926]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Hongyu,Zheng, Xueren,Zhang, Shengdong. 1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime[J]. ieee electron device letters,2015.
APA	He, Hongyu,Zheng, Xueren,&Zhang, Shengdong.(2015).1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime.ieee electron device letters.
MLA	He, Hongyu,et al."1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime".ieee electron device letters (2015).