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Quantum Dots Modified ZnO Based Fast-Speed Response Ultraviolet Photodetector 期刊论文
Zhongguo Jiguang/Chinese Journal of Lasers, 2022, 卷号: 49, 期号: 13
作者:  L. Sun;  D. Wang;  D. Fang;  X. Fang;  Z. Zhang
收藏  |  浏览/下载：7/0  |  提交时间：2023/06/14
Coexistence of (O-2)(n-) and Trapped Molecular O-2 as the Oxidized Species in P2-Type Sodium 3d Layered Oxide and Stable Interface Enabled by Highly Fluorinated Electrolyte 期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2021, 卷号: 143
作者:  Zhao, Chong;  Li, Chao;  Liu, Hui;  Qiu, Qing;  Geng, Fushan
收藏  |  浏览/下载：37/0  |  提交时间：2022/01/10
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏  |  浏览/下载：40/0  |  提交时间：2022/03/24
Electric field controllable high-spin SrRuO3 driven by a solid ionic junction 期刊论文
PHYSICAL REVIEW B, 2020, 卷号: 101, 期号: 21
作者:  Lu, Jingdi;  Si, Liang;  Yao, Xiefei;  Tian, Chengfeng;  Wang, Jing
收藏  |  浏览/下载：56/0  |  提交时间：2020/12/16
Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147
作者:  Li, Zongzhen;  Liu, Tianqi;  Bi, Jinshun;  Yao, Huijun;  Zhang, Zhenxing
收藏  |  浏览/下载：32/0  |  提交时间：2022/01/19
Oxygen Vacancy Defects Boosted High Performance p-Type Delafossite CuCrO2 Gas Sensors 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 40, 页码: 34727-34734
作者:  Tong, Bin;  Deng, Zanhong;  Xu, Bo;  Meng, Gang;  Shao, Jingzhen
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/25
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang
收藏  |  浏览/下载：65/0  |  提交时间：2019/06/10
First-Principles Study of Hydrogen Behaviors at Oxide/Ferrite Interface in ODS Steels 期刊论文
ACTA METALLURGICA SINICA, 2018, 卷号: 54, 期号: 2, 页码: 325-338
作者:  Feng Yuchao;  Xing Weiwei;  Wang Shoulong;  Chen Xingqiu;  Li Dianzhong
收藏  |  浏览/下载：23/0  |  提交时间：2021/02/02
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
作者:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ]
收藏  |  浏览/下载：34/0  |  提交时间：2018/09/18
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
作者:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi)
收藏  |  浏览/下载：22/0  |  提交时间：2018/05/14

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