QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Atomic diffusion and interface reaction of Cu/Si (111) films prepared by ionized cluster beam deposition 会议论文 17th International Conference on Surface Modification of Materials by Ion Beams (SMMIB), Harbin, PEOPLES R CHINA, SEP 13-17, 2011 作者:  Cao, B;  Yang, TR;  Li, GP;  Cho, S;  Kim, H 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/20 Interdiffusion  Interface reaction  Copper silicides  RBS  XRD   Surface morphology and roughness of Cu thin films prepared by ionized cluster beam deposition 会议论文 2012 International Conference on Frontiers of Advanced Materials and Engineering Technology, FAMET 2012, Xiamen, China, January 4, 2012 - January 5, 2012 作者:  Cao, Bo;  Yang, Tongrui;  Li, Gongping;  Cho, Seong Jin;  Kim, Hee 收藏  |  浏览/下载：2/0  |  提交时间：2017/01/20 Surface morphology  Atomic force microscopy  Chemical modification  Copper  Deposition  Engineering technology  Ionization  Ions  Morphology  Semiconducting silicon compounds  Surface roughness  Surfaces  Thin films  Vapor deposition  Acceleration voltages  Average grain size  Cu Films  Cu thin film  Deposition conditions  Ionized cluster beam deposition  Ionized cluster beams  P-type Si   XPS spectra of cu thin films prepared by ionized cluster beam deposition 会议论文 2nd International Symposium on Chemical Engineering and Material Properties, ISCEMP 2012, Taiyuan, Shanxi, China, June 22, 2012 - June 24, 2012 作者:  Cao, Bo;  Yang, Tongrui;  Li, Gongping;  Cho, Seongjin;  Kim, Hee 收藏  |  浏览/下载：6/0  |  提交时间：2017/01/20 X ray photoelectron spectroscopy  Atoms  Binding energy  Chemical engineering  Chemical modification  Deposits  Ions  Photoelectrons  Silicon  Surface properties  Thin films  Vapor deposition  Atomic binding  Bulk materials  Copper films  Cu thin film  Ionized cluster beam deposition  Ionized cluster beams  Local energy  Neutral clusters  P-type Si  XPS spectra   Thermal stability of Cu/Si (111) films prepared by ionized cluster beam technique 会议论文 2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011, Sanya, China, July 29, 2011 - July 31, 2011 作者:  Cao, Bo;  Jia, Yanhui;  Li, Gongping;  Cho, Seong Jin;  Kim, Hee 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/20 Film preparation  Annealing  Backscattering  Copper  Diffraction  Diffusion  Ionization  Ions  Metallic films  Rutherford backscattering spectroscopy  Silicides  Silicon  Spectrometry  Thermodynamic stability  X ray diffraction  Annealing temperatures  Atomic diffusions  Cu films  Interface reaction  Interface reactions  Ionized cluster beam (ICB)  Ionized cluster beams  P-type Si  Rutherford backscattering spectrometry  Rutherford backscattering spectrometry (RBS)  Si atoms  Si substrates  Thermally stable  X-ray diffraction (XRD)  XRD